Characterization of InGaAsP/InP double‐heterostructure wafers grown by metalorganic vapor phase epitaxy for semiconductor lasers by photoluminescence investigation with high‐power YAG‐laser excitation

1988 ◽  
Vol 63 (5) ◽  
pp. 1722-1728 ◽  
Author(s):  
Masashi Nakao ◽  
Kenji Sato ◽  
Mamoru Oishi ◽  
Yoshio Itaya ◽  
Yoshihiro Imamura
2015 ◽  
Vol 31 ◽  
pp. 100-105 ◽  
Author(s):  
C. Bilel ◽  
H. Fitouri ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  

1998 ◽  
Vol 27 (2) ◽  
pp. 81-84 ◽  
Author(s):  
B. K. Han ◽  
L. Li ◽  
M. J. Kappers ◽  
R. F. Hicks ◽  
H. Yoon ◽  
...  

1996 ◽  
Vol 68 (16) ◽  
pp. 2270-2272 ◽  
Author(s):  
T. J. Mountziaris ◽  
J. Peck ◽  
S. Stoltz ◽  
W. Y. Yu ◽  
A. Petrou ◽  
...  

2003 ◽  
Vol 0 (1) ◽  
pp. 188-191 ◽  
Author(s):  
T. Misaki ◽  
K. Tsuchiya ◽  
D. Sakai ◽  
A. Wakahara ◽  
H. Okada ◽  
...  

2000 ◽  
Vol 221 (1-4) ◽  
pp. 481-484 ◽  
Author(s):  
S. Matsumoto ◽  
H. Yaguchi ◽  
S. Kashiwase ◽  
T. Hashimoto ◽  
S. Yoshida ◽  
...  

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