High-power InGaN/AlGaN double-heterostructure blue-light-emitting diodes

2002 ◽  
Author(s):  
S. Nakamura
Keyword(s):  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency

High-power flip-chip blue light-emitting diodes based on AlGaInN

2005 ◽  
Vol 39 (7) ◽  
pp. 851-855 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
I. V. Roznanskii ◽  
S. A. Gurevich ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

Degradation behaviors of high power GaN-based blue light emitting diodes

2013 ◽  
Vol 22 (11) ◽  
pp. 117804 ◽  
Author(s):  
Can-Tao Zhong ◽  
Tong-Jun Yu ◽  
Jian Yan ◽  
Zhi-Zhong Chen ◽  
Guo-Yi Zhang
Keyword(s):  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Degradation Behaviors

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L8-L11 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Takashi Mukai
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes

1996 ◽  
Vol 69 (12) ◽  
pp. 1680-1682 ◽  
Author(s):  
Piotr Perlin ◽  
Marek Osiński ◽  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Jian Mu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Temperature Study

High-Power GaN P-N Junction Blue-Light-Emitting Diodes

1991 ◽  
Vol 30 (Part 2, No. 12A) ◽  
pp. L1998-L2001 ◽  
Author(s):  
Shuji Nakamura ◽  
Takashi Mukai ◽  
Masayuki Senoh
Keyword(s):  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting
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