15–32 GHz Broad Band Low-Noise Amplifier using 100nm GaN on Silicon Technology

Author(s):  
Shi-yong Zhang ◽  
Jian-xing Xu ◽  
Peng-hui Zheng ◽  
Xiao-dong Tong
2021 ◽  
Vol 1983 (1) ◽  
pp. 012080
Author(s):  
Yu Zou ◽  
Zhijian Chen ◽  
Junkai Lai ◽  
Bin Li ◽  
Zhaohui Wu ◽  
...  

Author(s):  
Ahmed M. Abdelmonem ◽  
Ahmed S. I. Amar ◽  
Amir Almslmany ◽  
Ibrahim L. Abdalla ◽  
Fathi A. Farag

The main aim of the paper is designing and implementing a broadband low-noise-amplifier (LNA) based on compensated matching network techniquein order to get high stable gain, low noise figure, low cost and smaller sizefor 3G/4G communication system applications at 2 GHz with bandwidth 600MHz. The Advanced Design System simulates the proposed circuit (ADS).The implementation was done with a class A bias circuit and a low noise transistor BFU 730F with a lower Noise Figure (NFmin) 0.62 dB. Collectorcurrent is measured to be 5.8mA and base current is 19.1μA with a supply voltage of 2.25V. The new design proposed a (NFmin) of 0.62 dB with a 17.8dB high stable amplifier gain. The microstrip lines (MSL) and compensated matching network techniques were used to improve the LNA’s stability and achieve a good result. The LNA board is implemented and assembled on the FR4 botton layer material. The results are virtually non existence equivalent between the simulated and the measured results.


2018 ◽  
Vol E101.C (1) ◽  
pp. 82-90
Author(s):  
Chang LIU ◽  
Zhi ZHANG ◽  
Zhiping WANG

Author(s):  
Z. Zhang ◽  
Z.H. Li ◽  
W.R. Zhang ◽  
F.Y. Zhao ◽  
C.L. Chen ◽  
...  

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