Wideband Low Noise Amplifier Design at L band for Satellite Receiver

2017 ◽  
Vol V (VIII) ◽  
pp. 2207-2212
Author(s):  
Ngo Thi Lanh
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
L Band ◽  
Amplifier Design ◽  
Noise Amplifier ◽  
Satellite Receiver

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

scholarly journals CMOS Ultra-Wideband Low Noise Amplifier Design

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
K. Yousef ◽  
H. Jia ◽  
R. Pokharel ◽  
A. Allam ◽  
M. Ragab ◽  
...  
Keyword(s):  
Impedance Matching ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Output Impedance ◽  
Integrated Inductor ◽  
Technology Process ◽  
Amplifier Design ◽  
Noise Amplifier

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.

Low power size-efficient CMOS UWB low-noise amplifier design

2008 ◽  
Vol 51 (2) ◽  
pp. 494-496
Author(s):  
Hee-Sauk Jhon ◽  
Ickhyun Song ◽  
Jongwook Jeon ◽  
MinSuk Koo ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Amplifier Design ◽  
Noise Amplifier

scholarly journals Small-signal and noise GaAs pHEMT modeling for low noise amplifier design

2020 ◽  
Vol 1499 ◽  
pp. 012033
Author(s):  
A A Popov ◽  
D V Bilevich ◽  
A A Metel ◽  
A S Salnikov ◽  
I M Dobush ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal ◽  
Amplifier Design ◽  
Noise Amplifier
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