Improved fabrication and noise performance of silicon double-drift millimeter-wave IMPATT diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

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MILLIMETER WAVE TO TERAHERTZ IN CMOS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156409006084 ◽

2009 ◽

Vol 19 (01) ◽

pp. 55-67 ◽

Cited By ~ 1

Author(s):

K. K. O ◽

S. SANKARAN ◽

C. CAO ◽

E.-Y. SEOK ◽

D. SHIM ◽

...

Keyword(s):

Output Power ◽

Millimeter Wave ◽

Fundamental Mode ◽

Cmos Circuits ◽

Noise Performance ◽

Mos Transistors

The feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 410-GHz push-push VCO in 45-nm CMOS, and a 180-GHz detector circuit in 130-nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible. Though these results are significant, output power of signal generators must be increased and acceptable noise performance of detectors must be achieved in order to demonstrate the applicability of CMOS for implementing practical terahertz systems.

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Investigation of microwave power generation of pulse double-drift Si IMPATT diodes operating in short part of millimeter wave lengths

2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW) ◽

10.1109/msmw.2016.7538103 ◽

2016 ◽

Author(s):

A. V. Bychok ◽

A. V. Zorenko

Keyword(s):

Power Generation ◽

Millimeter Wave ◽

Microwave Power ◽

Impatt Diodes

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Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

Journal of Semiconductors ◽

10.1088/1674-4926/41/3/032103 ◽

2020 ◽

Vol 41 (3) ◽

pp. 032103

Author(s):

S. J. Mukhopadhyay ◽

Prajukta Mukherjee ◽

Aritra Acharyya ◽

Monojit Mitra

Keyword(s):

Millimeter Wave ◽

Self Heating ◽

Impatt Diodes

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Self-packaged millimeter-wave Si-IMPATT diodes

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems Digest of Papers (Cat No 00EX397) ◽

10.1109/smic.2000.844307 ◽

2002 ◽

Cited By ~ 4

Author(s):

M. Luschas ◽

M. Wollitzer ◽

J.-F. Luy

Keyword(s):

Millimeter Wave ◽

Impatt Diodes

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Millimeter-wave GaAs Schottky-barrier IMPATT diodes

Proceedings of the IEEE ◽

10.1109/proc.1972.8925 ◽

1972 ◽

Vol 60 (11) ◽

pp. 1448-1449 ◽

Cited By ~ 4

Author(s):

M. Migitaka ◽

M. Nakamura ◽

K. Saito ◽

K. Sekine

Keyword(s):

Schottky Barrier ◽

Millimeter Wave ◽

Impatt Diodes

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IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

International Scholarly Research Notices ◽

10.1155/2015/484768 ◽

2015 ◽

Vol 2015 ◽

pp. 1-11

Author(s):

Bhadrani Banerjee ◽

Anvita Tripathi ◽

Adrija Das ◽

Kumari Alka Singh ◽

Aritra Acharyya ◽

...

Keyword(s):

Comparative Study ◽

Millimeter Wave ◽

Gaas Substrate ◽

Drift Region ◽

Rf Power ◽

Large Signal ◽

Atmospheric Window ◽

Atmospheric Windows ◽

Nonsinusoidal Voltage ◽

Impatt Diodes

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

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