IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

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Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.954.182 ◽

2019 ◽

Vol 954 ◽

pp. 182-187 ◽

Cited By ~ 1

Author(s):

Jun Ding Zheng ◽

Wen Sheng Wei ◽

Jian Zhu Ye ◽

Wei Bo Yang ◽

Chang Li ◽

...

Keyword(s):

Electric Field ◽

Integrated Circuit ◽

Drift Region ◽

Large Signal ◽

Static State ◽

Atmospheric Window ◽

Frequency Relation ◽

Negative Conductance ◽

Thz Power ◽

Impatt Diodes

Si/SiC heterostructural impact avalanche transit time (IMPATT) diode indicates of important applications in Terahertz (THz) power source, integrated circuit etc. In this paper, the (n)Si/(p)4H-SiC, (n)Si/(p)6H-SiC, (n)Si/(p)3C-SiC heterostructural double drift region IMPATT diodes operating at the atmospheric window frequency of 0.85 THz are designed by the drift-diffusion model while their static state, large signal and noise properties are numerically simulated. The performance parameters of the studied devices such as breakdown voltage, peak electric field strength, optimal negative conductance, output power, power conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were calculated and compared. This method can guide for optimizing the Si/SiC heterostructural IMPATT device in the future.

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Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681209666190807154014 ◽

2020 ◽

Vol 10 (4) ◽

pp. 501-506

Author(s):

Monisha Ghosh ◽

Arindam Biswas ◽

Aritra Acharyya

Keyword(s):

High Frequency ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Noise Performance ◽

Rf Power ◽

Drift Diffusion ◽

Frequency Bands ◽

Atmospheric Window ◽

Lower Noise ◽

Impatt Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078713000597 ◽

2013 ◽

Vol 5 (5) ◽

pp. 567-578 ◽

Cited By ~ 21

Author(s):

Aritra Acharyya ◽

Jit Chakraborty ◽

Kausik Das ◽

Subir Datta ◽

Pritam De ◽

...

Keyword(s):

Conversion Efficiency ◽

Power Output ◽

Series Resistance ◽

Simulation Method ◽

Experimental Results ◽

Drift Region ◽

Rf Power ◽

Large Signal ◽

Simulation Results

Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results show that the device is capable of delivering peak RF power of 657.64 mW with 8.25% conversion efficiency at 94 GHz for 50% voltage modulation; whereas RF power output and efficiency reduce to 89.61 mW and 2.22% respectively at 0.5 THz for same voltage modulation. Effect of parasitic series resistance on the L-S properties of DDR Si IMPATTs is also investigated, which shows that the decrease in RF power output and conversion efficiency of the device due to series resistance is more pronounced at higher frequencies especially at the THz regime. The NSVE L-S simulation results are compared with well established double-iterative field maximum (DEFM) small-signal (S-S) simulation results and finally both are compared with the experimental results. The comparative study shows that the proposed NSVE L-S simulation results are in closer agreement with experimental results as compared to those of DEFM S-S simulation.

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Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Micromachines ◽

10.3390/mi12080919 ◽

2021 ◽

Vol 12 (8) ◽

pp. 919

Author(s):

Yang Dai ◽

Qingsong Ye ◽

Jiangtao Dang ◽

Zhaoyang Lu ◽

Weiwei Zhang ◽

...

Keyword(s):

Impact Ionization ◽

Wide Bandgap ◽

Drift Region ◽

Rf Power ◽

Large Signal ◽

Impatt Diode ◽

Signal Characteristics ◽

Design And Manufacture ◽

First Time ◽

Ddr Impatt

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

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Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1014.68 ◽

2020 ◽

Vol 1014 ◽

pp. 68-74

Author(s):

Jun Ding Zheng ◽

Wen Sheng Wei ◽

Wei Bo Yang ◽

Chang Li

Keyword(s):

Electric Field ◽

Drift Region ◽

Large Signal ◽

Tunnel Current ◽

Large Power ◽

Static State ◽

Frequency Relation ◽

The Impact ◽

Lower Noise ◽

Impatt Diodes

Successes of GaN and SiC electronics in high frequency, large power realm indicate that, the GaN/SiC hetero-structures can be used to design the impact avalanche transit time (IMPATT) diodes operating at Terahertz range, of which holds advantages over homo-structural counterparts in lower noise and reduced tunnel current. Here, the (n)GaN/(p)SiC and (p)GaN/(n)SiC double drift region (DDR) IMPATT diodes operating at 0.85 THz are proposed based on the quantum corrected drift-diffusion (QCDD) model, the performance parameters of static state, large signal and noise properties of the studied devices such as peak electric field intensity, breakdown voltage, optimal negative conductance, output power, conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were numerically calculated and analyzed, which can guide to optimize the GaN/SiC IMPATT diodes.

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A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078712000839 ◽

2013 ◽

Vol 5 (1) ◽

pp. 91-100 ◽

Cited By ~ 14

Author(s):

Aritra Acharyya ◽

Suranjana Banerjee ◽

J. P. Banerjee

Keyword(s):

Electric Field ◽

Millimeter Wave ◽

Series Resistance ◽

Simulation Technique ◽

Drift Region ◽

Large Signal ◽

Depletion Width ◽

Steady State Oscillation ◽

Novel Method ◽

Phase Angles

A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

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