Abstract
This work presents an approach to developing dual-mode dual-band substrate integrated waveguide (SIW) bandpass filter based on multilayer process. TE102/TE201 and TE101/TE102 modes are used to feature the two passbands, respectively. To begin with, large range of band location ratios are decided by the effective dimension of the SIW resonator. With reference to the field distribution, independent coupling schemes of the dual-modes are then realized by slots or circular apertures etched on the middle metal layer. It allows to not only introduce a large design freedom of bandwidth but also keep compactness. Finally, source-load and mixed couplings are deployed to produce transmission zeros around the passband in providing a sharp selectivity in the two filters, respectively. The details to independently control the center frequencies and bandwidth of two passbands are also presented. A two-order double-layered and a triple-layered SIW dual-band bandpass filter are prototyped to evaluate the proposed design approach, respectively. Results show a good agreement between simulations and measurements. The proposed filter exhibits flexible design freedom, high selectivity as well as good out-of-band rejection.
