Novel measurement technique of WPT circuits using VNA and its data transformation into 0-ohm system

Author(s):  
Tetsuya Ishida ◽  
Kazuya Yamaguchi ◽  
Toshio Ishizaki ◽  
Ikuo Awai
2011 ◽  
Author(s):  
Don C. Bragg ◽  
Lee E. Frelich ◽  
Robert T. Leverett ◽  
Will Blozan ◽  
Dale J. Luthringer

Author(s):  
Mark Kimball

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).


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