Silicon Fringe Sample Metrology—A Thickness Measurement Technique

2013 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Measurement Technique ◽  
Thickness Measurement ◽  
Sample Thickness ◽  
Index Of Refraction ◽  
Interference Fringes ◽  
Noncontact Method ◽  
Thickness Variations

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).

Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F

1987 ◽  
Vol 95 ◽  
Author(s):  
R. Schwarz ◽  
K. Dietrich ◽  
S. Goedecker ◽  
J. Kolodzey ◽  
D. Slobodin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Temperature Coefficient ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Index Of Refraction ◽  
Complex Dielectric Constant ◽  
Optical Parameters ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

AbstractWe report the temperature dependence of several optical parameters of thin films of hydrogenated and fluorinated amorphous silicon alloys (a-SiGe:H,F) between 5 and 95 °C. The absorption coefficient near the optical band gap Eg increases with temperature. From this increase we calculate a temperature coefficient for Eg of −4.5×10−4 eV/K, which is essentially independent of band gap The concomittant change of index of refraction n was determined in the near infrared region from the interference pattern in the reflection spectra. The temperature coefficient dn/n/dT is 0.9×10−4 K−1 for un-alloyed a-Si:H,F and increases with increasing Ge atomic fraction. The changes of Eg and n with temperature are consistent with a simple quantummechanical description of the complex dielectric constant. We also report the temperature dependence of the minority carrier diffusion length in a-SiGe:H,F.

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

Temperature coefficient of Young’s modulus of silver microwhiskers determined by a laser Doppler vibration measurement

2021 ◽  
pp. 2150350
Author(s):  
Yijun Jiang ◽  
Mingyuan Lu ◽  
Shiliang Wang ◽  
Han Huang
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Single Crystals ◽  
Young’S Modulus ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Young's Modulus ◽  
Laser Doppler Vibrometer ◽  
Laser Doppler ◽  
Vibration Measurement

Temperature dependence of Young’s modulus of Ag microwhiskers was determined by a laser Doppler vibrometer. The Ag whiskers with diameters in sub-microns were synthesized by the use of physical vapor deposition (PVD). They have a five-fold twinned structure grown along the [1 1 0] direction. The temperature coefficient of Young’s modulus was measured to be [Formula: see text] ppm/K in the range of 300 K to 650 K. The measured values are very close to the reported values of [Formula: see text] ppm/K for bulk Ag single crystals. This finding can benefit the design of Ag-based micro/nano-electromechanical systems or micro/nano-interconnectors operated at elevated or lowered temperatures.

Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 865-868
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Avalanche Photodiodes ◽  
Positive Temperature Coefficient ◽  
Avalanche Breakdown ◽  
Positive Temperature ◽  
Electrical And Optical Properties ◽  
Positive Angle

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

Spekktroskopische Untersuchungen in der Festkörperchemie, IX / Spectroscopic Investigations in the Solid-State Chemistry, IX

1975 ◽  
Vol 30 (3-4) ◽  
pp. 198-201 ◽  
Author(s):  
Paul K. Burkert ◽  
Frank Hutter ◽  
Detlev Koth
Keyword(s):  
Solid State ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Asymmetry Parameter ◽  
Lattice Parameters ◽  
Coupling Constants ◽  
Solid State Chemistry ◽  
Spectroscopic Investigations ◽  
Experimental Correlation ◽  
The Absolute

The four 185Re, 187Re—NQR-transitions of RbReO4 were measured. From the NQR-coupling constants, asymmetry-parameter and normal temperature-coefficient in the range of 77-300°K one can conclude, that the anomalons temperature dependence of the NQR-frequencies of NH4ReO4 is not caused by the absolute values of certain lattice parameters.An experimental correlation of the Re—NQR-coupling constants of scheelite-structured perrhenates with the length of the elementar cell was found and discussed.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 473-476
Author(s):  
Patrick Fiorenza ◽  
Marilena Vivona ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Barrier Height ◽  
Conduction Band ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Interface ◽  
Tunneling Model ◽  
Mos Capacitors ◽  
Gate Current

We present a temperature-dependence electrical characterization of the oxide/semiconductor interface in MOS capacitors with a SiO2layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The post deposition annealing process in N2O allowed to achieve an interface state density Dit 9.0×1011cm-2eV-1below the conduction band edge. At room temperature, an electron barrier height (conduction band offset) of 2.8 eV was measured using the standard Fowler-Nordheim tunneling model. The electron conduction through the SiO2insulating layer was evaluated by studying the experimental temperature dependence of the gate current. In particular, the Fowler-Nordheim electron barrier height showed a negative temperature coefficient (dφB/dT= - 0.98 meV/°C), which is very close to the expected value for an ideal SiO2/4H-SiC system. This result, obtained for deposited SiO2layers, is an improvement compared to the values of the temperature coefficient of the Fowler-Nordheim electron barrier height reported for thermally grown SiO2. In fact, the smaller dependence ofφBon the temperature observed in this work represents a clear advantage of our deposited SiO2for the operation of MOSFET devices at high temperatures.

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