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Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers
Mapping Intimacies
◽
10.1109/ipc48725.2021.9593088
◽
2021
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Author(s):
Jennifer Selvidge
◽
Eamonn T. Hughes
◽
Chen Shang
◽
Robert W. Herrick
◽
John E. Bowers
◽
...
Keyword(s):
Quantum Dot
◽
Misfit Dislocation
◽
Quantum Dot Lasers
◽
Degradation Behaviors
◽
Inas Quantum Dot
Download Full-text
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References
High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si
2018 23rd Opto-Electronics and Communications Conference (OECC)
◽
10.1109/oecc.2018.8730014
◽
2018
◽
Author(s):
Daehwan Jung
◽
Robert Herrick
◽
Justin Norman
◽
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◽
Arthur C. Gossard
◽
...
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Quantum Dot
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Quantum Dot Lasers
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High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding
Applied Physics Letters
◽
10.1063/1.4938205
◽
2015
◽
Vol 107
(26)
◽
pp. 261107
◽
Cited By ~ 9
Author(s):
Zihao Wang
◽
Ruizhe Yao
◽
Stefan F. Preble
◽
Chi-Sen Lee
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Luke F. Lester
◽
...
Keyword(s):
Low Temperature
◽
Quantum Dot
◽
Wafer Bonding
◽
High Performance
◽
Silicon Substrates
◽
Quantum Dot Lasers
◽
Gaas Wafer
◽
Inas Quantum Dot
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Band filling in p-doped InAs quantum dot lasers
CLEO:2011 - Laser Applications to Photonic Applications
◽
10.1364/cleo_si.2011.cfl2
◽
2011
◽
Author(s):
M. Hutchings
◽
I. O’Driscoll
◽
P. M. Smowton
◽
P. Blood
Keyword(s):
Quantum Dot
◽
Quantum Dot Lasers
◽
Band Filling
◽
Inas Quantum Dot
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Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon
Novel In-Plane Semiconductor Lasers XX
◽
10.1117/12.2579347
◽
2021
◽
Author(s):
Matteo Buffolo
◽
Lorenzo Rovere
◽
Carlo De Santi
◽
Justin Norman
◽
John E. Bowers
◽
...
Keyword(s):
Dislocation Density
◽
Quantum Dot
◽
Quantum Dot Lasers
◽
Inas Quantum Dot
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Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers
Applied Physics Letters
◽
10.1063/1.4934838
◽
2015
◽
Vol 107
(17)
◽
pp. 171106
◽
Cited By ~ 9
Author(s):
Weng W. Chow
◽
Alan Y. Liu
◽
Arthur C. Gossard
◽
John E. Bowers
Keyword(s):
Quantum Dot
◽
Inhomogeneous Broadening
◽
Quantum Dot Lasers
◽
Inas Quantum Dot
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Single mode operation 1.3 μm InAs quantum dot lasers based on small mode volume qL2 photonic crystal nano-cavity
The 4th IEEE International NanoElectronics Conference
◽
10.1109/inec.2011.5991704
◽
2011
◽
Cited By ~ 1
Author(s):
C.-J. Wang
◽
Y. C. Tseng
◽
J.-I. Chyi
◽
W.-Y. Chen
◽
T. M. Hsu
◽
...
Keyword(s):
Photonic Crystal
◽
Quantum Dot
◽
Single Mode
◽
Quantum Dot Lasers
◽
Single Mode Operation
◽
Mode Operation
◽
Inas Quantum Dot
◽
Mode Volume
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InAs quantum dot lasers on InP substrate
2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.
◽
10.1109/nano.2003.1231793
◽
2004
◽
Author(s):
Yueming Qiu
◽
D. Uhl
◽
R. Chacon
◽
R.Q. Yang
Keyword(s):
Quantum Dot
◽
Quantum Dot Lasers
◽
Inp Substrate
◽
Inas Quantum Dot
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A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps
Microelectronics Journal
◽
10.1016/j.mejo.2005.02.001
◽
2005
◽
Vol 36
(3-6)
◽
pp. 183-185
Author(s):
G. Sun
◽
Richard A. Soref
◽
Jacob B. Khurgin
Keyword(s):
Quantum Dot
◽
Comparative Study
◽
Band Gaps
◽
Quantum Dot Lasers
◽
Inas Quantum Dot
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Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers
IEEE Photonics Technology Letters
◽
10.1109/lpt.2006.873560
◽
2006
◽
Vol 18
(8)
◽
pp. 965-967
◽
Cited By ~ 16
Author(s):
I.C. Sandall
◽
P.M. Smowton
◽
C.L. Walker
◽
H.Y. Liu
◽
M. Hopkinson
◽
...
Keyword(s):
Quantum Dot
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Quantum Dot Lasers
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Inas Quantum Dot
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Advanced self-assembled indium arsenide (InAs) quantum-dot lasers
Semiconductor Lasers
◽
10.1533/9780857096401.2.272
◽
2013
◽
pp. 272-315
◽
Cited By ~ 2
Author(s):
M. Sugawara
◽
Y. Arakawa
◽
K. Tanabe
Keyword(s):
Quantum Dot
◽
Indium Arsenide
◽
Quantum Dot Lasers
◽
Self Assembled
◽
Inas Quantum Dot
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