Band filling in p-doped InAs quantum dot lasers

2011 ◽  
Author(s):  
M. Hutchings ◽  
I. O’Driscoll ◽  
P. M. Smowton ◽  
P. Blood
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Band Filling ◽  
Inas Quantum Dot

Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature

2007 ◽  
Vol 7 (12) ◽  
pp. 4443-4446 ◽  
Author(s):  
Jin Soo Kim ◽  
Cheul-Ro Lee ◽  
Kyeong Won Seol ◽  
Dae Kon Oh
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Wavelength Shift ◽  
Material System ◽  
Quantum Dot Lasers ◽  
Lasing Wavelength ◽  
Band Filling ◽  
Inas Quantum Dot

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

2018 ◽  
Author(s):  
Daehwan Jung ◽  
Robert Herrick ◽  
Justin Norman ◽  
Yating Wan ◽  
Arthur C. Gossard ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon

2021 ◽  
Author(s):  
Matteo Buffolo ◽  
Lorenzo Rovere ◽  
Carlo De Santi ◽  
Justin Norman ◽  
John E. Bowers ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

scholarly journals Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

2015 ◽  
Vol 107 (17) ◽  
pp. 171106 ◽  
Author(s):  
Weng W. Chow ◽  
Alan Y. Liu ◽  
Arthur C. Gossard ◽  
John E. Bowers
Keyword(s):  
Quantum Dot ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

2005 ◽  
Vol 36 (3-6) ◽  
pp. 183-185
Author(s):  
G. Sun ◽  
Richard A. Soref ◽  
Jacob B. Khurgin
Keyword(s):  
Quantum Dot ◽  
Comparative Study ◽  
Band Gaps ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

2006 ◽  
Vol 18 (8) ◽  
pp. 965-967 ◽  
Author(s):  
I.C. Sandall ◽  
P.M. Smowton ◽  
C.L. Walker ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

Advanced self-assembled indium arsenide (InAs) quantum-dot lasers

2013 ◽  
pp. 272-315 ◽  
Author(s):  
M. Sugawara ◽  
Y. Arakawa ◽  
K. Tanabe
Keyword(s):  
Quantum Dot ◽  
Indium Arsenide ◽  
Quantum Dot Lasers ◽  
Self Assembled ◽  
Inas Quantum Dot
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