Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys

2018 IEEE Photonics Conference (IPC) ◽

10.1109/ipcon.2018.8527219 ◽

2018 ◽

Author(s):

Justin C. Goodrich ◽

Damir Borovac ◽

Chee-Keong Tan ◽

Nelson Tansu

Keyword(s):

Nitride Alloys ◽

Band Anticrossing

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Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys

2019 IEEE Photonics Conference (IPC) ◽

10.1109/ipcon.2019.8908412 ◽

2019 ◽

Author(s):

Justin C. Goodrich ◽

Damir Borovac ◽

Chee-Keong Tan ◽

Nelson Tansu

Keyword(s):

Nitride Alloys ◽

Band Anticrossing

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Band anticrossing in dilute nitrides

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/31/024 ◽

2004 ◽

Vol 16 (31) ◽

pp. S3355-S3372 ◽

Author(s):

W Shan ◽

K M Yu ◽

W Walukiewicz ◽

J Wu ◽

J W Ager ◽

...

Keyword(s):

Dilute Nitrides ◽

Band Anticrossing

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Supertoughening in B1 transition metal nitride alloys by increased valence electron concentration

Acta Materialia ◽

10.1016/j.actamat.2010.12.013 ◽

2011 ◽

Vol 59 (5) ◽

pp. 2121-2134 ◽

Author(s):

D.G. Sangiovanni ◽

L. Hultman ◽

V. Chirita

Keyword(s):

Transition Metal ◽

Electron Concentration ◽

Valence Electron ◽

Valence Electron Concentration ◽

Metal Nitride ◽

Transition Metal Nitride ◽

Nitride Alloys ◽

Increased Valence

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Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

Semiconductors ◽

10.1134/s1063782613080149 ◽

2013 ◽

Vol 47 (8) ◽

pp. 1018-1025 ◽

Author(s):

N. K. Morozova ◽

A. A. Kanakhin ◽

I. N. Miroshnikova ◽

V. G. Galstyan

Keyword(s):

Optical Properties ◽

Band Anticrossing

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The impact of 3D compositional fluctuations on the external quantum efficiency and defect generation in nitride alloys with a low In or Al molar fraction

Journal of Physics Conference Series ◽

10.1088/1742-6596/917/5/052018 ◽

2017 ◽

Vol 917 ◽

pp. 052018

Author(s):

E I Shabunina ◽

N M Shmidt ◽

A E Chernyakov ◽

N A Talnishnikh ◽

A Ya Polyakov ◽

...

Keyword(s):

Quantum Efficiency ◽

External Quantum Efficiency ◽

Molar Fraction ◽

Defect Generation ◽

Nitride Alloys ◽

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Group III-nitride alloys as photovoltaic materials

10.1117/12.561935 ◽

2004 ◽

Author(s):

Joel W. Ager III ◽

Junqiao Wu ◽

Kin M. Yu ◽

R. E. Jones ◽

S. X. Li ◽

...

Keyword(s):

Group Iii ◽

Photovoltaic Materials ◽

Nitride Alloys ◽

Group Iii Nitride

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eg−t2g Sub Band Splitting via Crystal Field and Band Anticrossing Interaction in NixCd1-xO Thin Films

Thin Solid Films ◽

10.1016/j.tsf.2021.138908 ◽

2021 ◽

pp. 138908

Author(s):

Arkaprava Das ◽

Parasmani Rajput ◽

Anumeet Kaur ◽

C. Balasubramanian ◽

D. Kanjilal ◽

...

Keyword(s):

Crystal Field ◽

Band Splitting ◽

Band Anticrossing

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Valence Band Anticrossing model for InAs1-xBix by k·p method

Foundations and Frontiers in Computer, Communication and Electrical Engineering ◽

10.1201/b20012-85 ◽

2016 ◽

pp. 437-440

Author(s):

D Samajdar ◽

T Das ◽

S Dhar

Keyword(s):

Valence Band ◽

Valence Band Anticrossing ◽

Band Anticrossing

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Properties of multilayered and multicomponent nitride alloys from first principles

10.3384/diss.diva-145091 ◽

2018 ◽

Author(s):

Fei Wang

Keyword(s):

First Principles ◽

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Successes and Predictions of A Pseudopotential Approach in Anion-Mixed Nitrides

MRS Proceedings ◽

10.1557/proc-692-h1.3.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

L. Bellaiche ◽

A. Al-Yacoub ◽

N. A. Modine ◽

E. D. Jones

Keyword(s):

Solid Solutions ◽

Complex Anion ◽

High Accuracy ◽

Nitride Alloys ◽

Pseudopotential Approach ◽

Strain Dependent ◽

AbstractThe construction and the parameters of a new-strain dependent empirical pseudopotentials method are described and provided, respectively. This method is shown to reproduce with a very high accuracy some observed unusual properties in various complex anion-mixed nitride alloys. This method is also used to predict and understand anomalous effects that remain to be experimentally discovered in Ga1−yInyAs1−xNx quaternaries and GaAs0.5−xP0.5−xN2x solid solutions.

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