HF dielectric properties of PZT thin films processed by sol-gel method on 3-inches Si wafers

Author(s):  
M. Pham Thi ◽  
P. Martins ◽  
R. Bisaro ◽  
A. Ziaei
2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.


1992 ◽  
Vol 1 (2-4) ◽  
pp. 293-304 ◽  
Author(s):  
H. Watanabe ◽  
T. Mihara ◽  
C. A. Paz De Araujo

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5272-5276 ◽  
Author(s):  
Yutaka Ohya ◽  
Takashi Ito ◽  
Yasutaka Takahashi

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