Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method

1992 ◽  
Vol 1 (2-4) ◽  
pp. 293-304 ◽  
Author(s):  
H. Watanabe ◽  
T. Mihara ◽  
C. A. Paz De Araujo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

scholarly journals Effect of Prebaking Temperature on Structure and Ferroelectric Properties of PZT Thin Films Prepared by Sol-Gel Method

1996 ◽  
Vol 64 (11) ◽  
pp. 1166-1173
Author(s):  
Sachiko ONO ◽  
Masakatsu MAEDA ◽  
Tetsuya OSAKA ◽  
Ichiro KOIWA ◽  
Takao KANEHIRA ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Preparation of Al Doped PZT Thin Films Using a Sol-Gel Method

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Iijima ◽  
N. Sanada ◽  
K. Hiyama ◽  
H Tsuboi ◽  
M. Okada
Keyword(s):  
Thin Films ◽  
Cell Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Reduction Rate ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Al Content ◽  
Capacitor Cell

AbstractAl substitution for Zr/Ti site of PZT was attempted using a sol-gel method, and the ferroelectric properties of 200nm-thick Al doped PZT thin films were compared with those of non- doped PZT film. The leakage current of the thin films decreased with increasing Al content. Ps and Pr also decreased with increasing Al content, whereas Ec did not show a significant change. Furthermore, a simple capacitor cell structure like FeRAM was prepared using a seed layer process. The capacitor structure was Pb(Ti0.975Al0.025)O3/ Pb1.1((Zr0.52Ti0.48)0. 975Al0.025)O3/ Pb(Ti0.975Al0.025)O3, and 2Pr was 26μC/cm2. The fatigue properties of the A1 doped PZT capacitor cell showed a little improvement, because the reduction rate of the fatigue was smaller than that of non-doped PZT thin film.

PZT Thin Films Synthesis by Sol-Gel Method and Study of Local Ferroelectric Properties

2013 ◽  
Vol 442 (1) ◽  
pp. 95-100 ◽  
Author(s):  
M. V. Silibin ◽  
A. A. Dronov ◽  
S. A. Gavrilov ◽  
V. V. Smirnov ◽  
D. A. Kiselev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method
Sign in / Sign up

Export Citation Format

Share Document