scholarly journals Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology

2020 ◽  
Author(s):  
Raju Ahamed ◽  
Mikko Varonen ◽  
Dristy Parveg ◽  
Md Najmussadat ◽  
Mikko Kantanen ◽  
...  
Keyword(s):  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Power Detector

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

2019 ◽  
Author(s):  
Abdul Ali ◽  
Paolo Colantonio ◽  
Franco Giannini ◽  
Dietmar Kissinger ◽  
Herman Jalli Ng ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals E‐band power detector with robust temperature performance in 130 nm SiGe BiCMOS

2019 ◽  
Vol 55 (13) ◽  
pp. 733-735
Author(s):  
Chen Wang ◽  
Debin Hou ◽  
Jixin Chen ◽  
Wei Hong
Keyword(s):  
Temperature Performance ◽  
Band Power ◽  
Sige Bicmos ◽  
Power Detector

A Fully Integrated S-Band Power Amplifier in 0.35um-SiGe BiCMOS Technology

2011 ◽  
Vol 403-408 ◽  
pp. 2481-2484
Author(s):  
Kang Li ◽  
Guo Dong Huang ◽  
Xiao Feng Yang ◽  
Qian Feng ◽  
Chao Xian Zhu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Small Signal ◽  
Two Stage ◽  
Fully Integrated ◽  
Matching Networks ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
On Chip

A fully integrated S-band high efficiency power amplifier using the TSMC 0.35 um SiGe BiCMOS technology is presented. The two-stage power amplifier has been optimized for the whole S-band covering 2 GHz to 4 GHz frequency band for higher 1-dB compression point and efficiency. The input and output matching networks are designed on chip. From the simulate result, the two-stage power amplifier achieves high PAE of 28% and saturation output power of 23.3 dBm at 3 GHz, with the small signal gain of 18.7 dB. Besides, this PA realizes the PAE within the band of 2.4GHz to 4GHz exceed 25%, and the highest PAE of 30.6% at 3.4 GHz.

A W-band power detector RFIC design in 0.13 μm SiGe BiCMOS process

2014 ◽  
Vol 57 (2) ◽  
pp. 414-417 ◽  
Author(s):  
Rolf Jonsson ◽  
Shakila Bint Reyaz ◽  
Robert Malmqvist ◽  
Mehmet Kaynak
Keyword(s):  
Band Power ◽  
W Band ◽  
Sige Bicmos ◽  
Power Detector ◽  
Bicmos Process

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos
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