Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3059990 ◽

2021 ◽

Vol 68 (4) ◽

pp. 1439-1445

Author(s):

Hanbin Ying ◽

Jeffrey W. Teng ◽

John D. Cressler

Keyword(s):

Cryogenic Temperatures ◽

Current Mirrors ◽

Bicmos Technology ◽

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Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998323 ◽

1998 ◽

Vol 08 (PR3) ◽

pp. Pr3-99-Pr3-102 ◽

Author(s):

J. M. Roldán ◽

J. D. Cressler ◽

G. Niu ◽

S. D. Clark ◽

D. Nguyen-Ngoc

Keyword(s):

Gamma Radiation ◽

Radiation Tolerance ◽

Cryogenic Temperatures ◽

Bicmos Technology ◽

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A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392970 ◽

2020 ◽

Author(s):

Michael Collisi ◽

Michael Moller

Keyword(s):

High Linearity ◽

Bicmos Technology ◽

Sige Bicmos ◽

Analog Multiplexer

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A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology

2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf51851.2021.9383328 ◽

2021 ◽

Author(s):

Sascha Breun ◽

Albert-Marcel Schrotz ◽

Marco Dietz ◽

Vadim Issakov ◽

Robert Weigel

Keyword(s):

Frequency Doubler ◽

Bicmos Technology ◽

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Fully integrated low phase noise VCO design in SiGe BiCMOS technology

Proceedings RAWCON 2001. 2001 IEEE Radio and Wireless Conference (Cat.No.01EX514) ◽

10.1109/rawcon.2001.947544 ◽

2002 ◽

Author(s):

Xudong Wang ◽

D. Wang ◽

K. Schelkle ◽

P. Bacon

Keyword(s):

Phase Noise ◽

Fully Integrated ◽

Bicmos Technology ◽

Sige Bicmos ◽

Low Phase Noise

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Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 IEEE Radiation Effects Data Workshop ◽

10.1109/redw.2012.6353734 ◽

2012 ◽

Author(s):

Nelson E. Lourenco ◽

Robert L. Schmid ◽

Kurt A. Moen ◽

Stanley D. Phillips ◽

Troy D. England ◽

...

Keyword(s):

Transient Response ◽

Bicmos Technology ◽

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Analysis and Design of Low Power Wideband Programmable Frequency Divider in 0.13-μm SiGe BiCMOS Technology

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2021.153879 ◽

2021 ◽

pp. 153879

Author(s):

Guoxiao Cheng ◽

Zhiqun Li ◽

Wen Wu

Keyword(s):

Low Power ◽

Frequency Divider ◽

Analysis And Design ◽

Bicmos Technology ◽

Sige Bicmos ◽

Programmable Frequency Divider

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A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures

2006 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.2006.311170 ◽

2006 ◽

Author(s):

Ramkumar Krithivasan ◽

Yuan Lu ◽

Laleh Najafizadeh ◽

Chendong Zhu ◽

John Cressler ◽

...

Keyword(s):

Operational Amplifier ◽

Cryogenic Temperatures ◽

Slew Rate ◽

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Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz mmic down-conversion mixer

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005. ◽

10.1109/bipol.2005.1555239 ◽

2005 ◽

Author(s):

Sang-Heung Lee ◽

Ja-Yol Lee ◽

Sang-Hoon Kim ◽

Hyun-Cheol Bae ◽

Seung-Yun Lee ◽

...

Keyword(s):

Bicmos Technology ◽

Sige Bicmos ◽

Down Conversion

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SiGe BiCMOS technology for highly integrated wireless transceivers

25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. ◽

10.1109/gaas.2003.1252390 ◽

2003 ◽

Author(s):

M. Racanelli ◽

Pingxi Ma ◽

P. Kempf

Keyword(s):

Wireless Transceivers ◽

Bicmos Technology ◽

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0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) ◽

10.1109/bipol.2001.957878 ◽

2002 ◽

Author(s):

K. Schuegraf ◽

M. Racanelli ◽

A. Kalburge ◽

B. Shen ◽

Chun Hu ◽

...

Keyword(s):

Bicmos Technology ◽

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