High temperature high field numerical modeling and experimental characterization of 4H-SiC MOSFETs

Author(s):  
Siddharth Potbhare ◽  
Neil Goldsman ◽  
Aivars Lelis
2014 ◽  
Vol 113 ◽  
pp. 1261-1268 ◽  
Author(s):  
Laia Miró ◽  
M. Elena Navarro ◽  
Priyamvadha Suresh ◽  
Antoni Gil ◽  
A. Inés Fernández ◽  
...  

1999 ◽  
Vol 25 (5) ◽  
pp. 179-187
Author(s):  
Satoshi KOBAYASHI ◽  
Nobuo TAKEDA ◽  
Mikio OBA ◽  
Shinji OGIHARA ◽  
Akira KOBAYASHI

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