1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 μm band

2002 ◽  
Author(s):  
F. Koyama ◽  
D. Schlenker ◽  
T. Miyamoto ◽  
Z. Chen ◽  
T. Yamatoya ◽  
...  
Keyword(s):  
Quantum Well ◽  
Superluminescent Diode ◽  
Highly Strained

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

2011 ◽  
Vol 45 (9) ◽  
pp. 1227-1230 ◽  
Author(s):  
D. A. Vinokurov ◽  
D. N. Nikolaev ◽  
N. A. Pikhtin ◽  
A. L. Stankevich ◽  
V. V. Shamakhov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Diode Lasers ◽  
Highly Strained

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

2018 ◽  
Author(s):  
Shuai Zhou ◽  
Zu-Rong Tang ◽  
Shang-Jun Liu ◽  
Yong Zhou ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Superluminescent Diode ◽  
Strained Quantum Well

Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm

2006 ◽  
Author(s):  
C. J. Panchal ◽  
V. A. Kheraj ◽  
K. M. Patel ◽  
P. K. Patel ◽  
B. M. Arora ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Highly Strained ◽  
Ingaas Quantum Well

Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures

1990 ◽  
Vol 56 (14) ◽  
pp. 1350-1352 ◽  
Author(s):  
J. F. Klem ◽  
W. S. Fu ◽  
P. L. Gourley ◽  
E. D. Jones ◽  
T. M. Brennan ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Well ◽  
Threading Dislocation ◽  
Quantum Well Structures ◽  
Threading Dislocation Density ◽  
Highly Strained

scholarly journals InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

2010 ◽  
Vol 5 (6) ◽  
pp. 1079-1084 ◽  
Author(s):  
Zhenhua Li ◽  
Jiang Wu ◽  
Zhiming M. Wang ◽  
Dongsheng Fan ◽  
Aqiang Guo ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Index ◽  
Superluminescent Diode ◽  
Ingaas Quantum Well

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

2008 ◽  
Vol 310 (15) ◽  
pp. 3615-3620 ◽  
Author(s):  
Y.K. Su ◽  
W.C. Chen ◽  
C.T. Wan ◽  
H.C. Yu ◽  
R.W. Chuang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Highly Strained
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