1.3 μm strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (>80 A/cm/sup 2//well)

2002 ◽  
Author(s):  
K. Otsubo ◽  
N. Sekine ◽  
Y. Nishijima ◽  
O. Aoki ◽  
A. Kuramata ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Strained Quantum Well

Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

2015 ◽  
Vol 33 (15) ◽  
pp. 3163-3169 ◽  
Author(s):  
Jun Wang ◽  
Xiaomin Ren ◽  
Can Deng ◽  
Haiyang Hu ◽  
Yunrui He ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

1987 ◽  
Author(s):  
Toshiro HAYAKAWA ◽  
Masafumi KONDO ◽  
Takahiro SUYAMA ◽  
Kosei TAKAHASHI ◽  
Saburo YAMAMOTO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

scholarly journals Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

2002 ◽  
Vol 81 (14) ◽  
pp. 2523-2525 ◽  
Author(s):  
Nelson Tansu ◽  
Nicholas J. Kirsch ◽  
Luke J. Mawst
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Dilute Nitride ◽  
Low Threshold
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