D-Band SiGe BiCMOS Power Amplifier With 16.8,dBm P1,dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3049458 ◽

2021 ◽

pp. 1-4

Author(s):

Ibrahim Petricli ◽

Domenico Riccardi ◽

Andrea Mazzanti

Keyword(s):

Power Amplifier ◽

Common Base ◽

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2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage

2017 IEEE International Solid-State Circuits Conference (ISSCC) ◽

10.1109/isscc.2017.7870251 ◽

2017 ◽

Author(s):

Junlei Zhao ◽

Elham Rahimi ◽

Francesco Svelto ◽

Andrea Mazzanti

Keyword(s):

Power Amplifier ◽

Common Base ◽

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Design flow for a SiGe BiCMOS based power amplifier

2009 International Semiconductor Conference ◽

10.1109/smicnd.2009.5336537 ◽

2009 ◽

Author(s):

Mladen Bozanic ◽

Saurabh Sinha ◽

Monuko du Plessis ◽

Alexandru Muller

Keyword(s):

Power Amplifier ◽

Design Flow ◽

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A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 42nd European Microwave Conference ◽

10.23919/eumc.2012.6459375 ◽

2012 ◽

Author(s):

Roee Ben Yishay ◽

Roi Carmon ◽

Oded Katz ◽

Benny Sheinman ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2015.7337742 ◽

2015 ◽

Author(s):

Seyed Yahya Mortazavi ◽

Kwang-Jin Koh

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2016.7508314 ◽

2016 ◽

Author(s):

Apostolos Samelis ◽

Edward Whittaker ◽

Michael Ball ◽

Alasdair Bruce ◽

John Nisbet ◽

...

Keyword(s):

Power Amplifier ◽

Flip Chip ◽

Fully Integrated ◽

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A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits ◽

10.1109/rfic.2005.1489204 ◽

2005 ◽

Author(s):

N. Shiramizu ◽

T. Masuda ◽

M. Tanabe ◽

K. Washio

Keyword(s):

Low Power ◽

Power Amplifier ◽

Low Noise ◽

Bicmos Technology ◽

Full Band ◽

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A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

2011 Asia Pacific Conference on Postgraduate Research in Microelectronics & Electronics ◽

10.1109/primeasia.2011.6075075 ◽

2011 ◽

Author(s):

Yan Qiong ◽

Hua Lin ◽

Chen Lei ◽

Ruan Ying ◽

Su Jie ◽

...

Keyword(s):

Power Amplifier ◽

Class A ◽

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A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2015.7337787 ◽

2015 ◽

Author(s):

Roee Ben Yishay ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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A K-/Ka-Band 21.4 dBm Power Amplifier with Four-Way Twisted Combiner in $0.13\ \mu\mathrm{m}$ SiGe BiCMOS

2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) ◽

10.1109/icmmt45702.2019.8992517 ◽

2019 ◽

Author(s):

Yuanhui Gu ◽

Chenxi Zhao ◽

Hongyan Tang ◽

Dong Chen ◽

Xiaoning Zhang ◽

...

Keyword(s):

Power Amplifier ◽

Ka Band ◽

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A fully integrated, highly linear SiGe BiCMOS class-AB power amplifier targeting 2.4GHz applications

2010 Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) ◽

10.1109/primeasia.2010.5604909 ◽

2010 ◽

Author(s):

Zhang Shulin ◽

Su Jie ◽

Chen Lei ◽

Tian Liang ◽

Zhou Jin ◽

...

Keyword(s):

Power Amplifier ◽

Fully Integrated ◽

Class Ab ◽

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