ABSTRACTRaman scattering has been used to characterize lattice damage and impurity-induced compositional disordering in AlGaAs superlattice suitable for optical waveguiding. The degree of damage induced by both conventional ion beam (CIB) implantation and focused ion beam (FIB) implantation is studied using a spatial correlation model to interpret the Raman spectra. FIB implantation is found to induce slightly more damage than CIB implantation for doses of 8×1013 cm−2 and 4×1014 cm−2. and significantly more damage with 2×1015 cm2 compared to CIB implantations of the same dose. Suitable FIB implantation and rapid thermal annealing (RTA) conditions which provide compositional mixing were determined using Raman and photoluminescence spectroscopy. Using these conditions, an optical channel waveguide in AlGaAs superlattice formed by FIB-induced compositional intermixing is demonstrated.