Microring-Resonator Cross-Connect Filters in Silicon Nitride: Rib Waveguide Dimensions Dependence

2006 ◽  
Vol 12 (6) ◽  
pp. 1380-1387 ◽  
Author(s):  
Shengmei Zheng ◽  
Hui Chen ◽  
Andrew W. Poon
2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.


Author(s):  
Jiaqi Wang ◽  
Zhenzhou Cheng ◽  
Bingqing Zhu ◽  
Chester Shu ◽  
Hon Ki Tsang

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 235
Author(s):  
Jianhao Zhang ◽  
Rongbo Wu ◽  
Min Wang ◽  
Youting Liang ◽  
Junxia Zhou ◽  
...  

We demonstrate the hybrid integration of a lithium niobate microring resonator with a silicon nitride waveguide in the vertical configuration to achieve efficient light coupling. The microring resonator is fabricated on a lithium niobate on insulator (LNOI) substrate using photolithography assisted chemo-mechanical etching (PLACE). A fused silica cladding layer is deposited on the LNOI ring resonator. The silicon nitride waveguide is further produced on the fused silica cladding layer by first fabricating a trench in the fused silica while using focused ion beam (FIB) etching for facilitating the evanescent coupling, followed by the formation of the silicon nitride waveguide on the bottom of the trench. The FIB etching ensures the required high positioning accuracy between the waveguide and ring resonator. We achieve Q-factors as high as 1.4 × 107 with the vertically integrated device.


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