Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

2011 ◽  
Vol 403-408 ◽  
pp. 758-761
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  

This paper highlights the study of the free carrier injection effect on the active SOI optical ring resonator. The effect of the free carrier injection on optical ring resonator was evaluated by varying the p+ and n+ doping concentrations. The device performances are predicted by using numerical modelling software of the 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the refractive index change increases as the p+and n+doping concentrations is getting higher. A shift in resonant wavelength of around 2 nm was predicted at 5x1019cm3p+and n+doping concentrations with 5.8x10-3refractive index change. It is also shown that 8.2dB change of the output response obtained through the output.


2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.


2021 ◽  
Vol 45 (4) ◽  
pp. 335-339
Author(s):  
Mehdi Ghoumazi ◽  
Messaoud Hameurlain

A new study was presented on a new sensor based on two-dimensional photonic crystals (Phc's) to detect the following three organic materials: iodobenzene (C6H5I), fluorobenzene (C6H5F), chlorobenzene (C6H5Cl). These materials have dielectric constants (εr) equal to 2.623; 2.140; 2.318, respectively. The proposed sensor is a structure made of silicon rods submerged in air plus a ring resonator. The ring resonator is stuck between two horizontal waveguides. At the end of the ends of the structure there are four ports where port 1 and 2 belong to the top guide and port (3) and (4) the bottom one. In order to analyze the behavior of the sensor, a plane wave expansion approach (PWE) and the finite element method (FEM) are applied. Thanks to the MATLAB and COMSOL simulation software, we were able to obtain the following numerical results: the norm of the electric field, the total energy density and this last magnitude according to the refractive indices of the different organic materials used. We could observe variations in energy density for each material. So, this change is due to their refractive index which varies from one material to another. In this study, we have fixed the other parameters like the constant of the lattice "a" and the radius "r" and we are interested in the dielectric constants (εr) or more precisely the refractive index (n), the latter proves that it is one of the important parameters for detection.


Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 5038 ◽  
Author(s):  
Hongjun Gu ◽  
He Gong ◽  
Chunxue Wang ◽  
Xiaoqiang Sun ◽  
Xibin Wang ◽  
...  

In this paper, we present and analyze a compact inner-wall grating slot microring resonator (IG-SMRR) with the footprint of less than 13 μm × 13 μm on the silicon-on-insulator (SOI) platform for label-free sensing, which comprises a slot microring resonator (SMRR) and inner-wall grating (IG). Its detection range is significantly enhanced without the limitation of the free spectral region (FSR) owing to the combination of SMRR and IG. The IG-SMRR has an ultra-large quasi-FSR of 84.5 nm as the detection range, and enlarged factor is up to over 3 compared with the conventional SMRR. The concentration sensitivities of sodium chloride solutions and D-glucose solutions are 996.91 pm/% and 968.05 pm/%, respectively, and the corresponding refractive index (RI) sensitivities are 559.5 nm/RIU (refractive index unit) and 558.3 nm/RIU, respectively. The investigation on the combination of SMRR and IG is a valuable exploration of label-free sensing application for ultra-large detection range and ultra-high sensitivity in future.


2019 ◽  
Vol 44 (4) ◽  
pp. 915 ◽  
Author(s):  
M. Nedeljkovic ◽  
C. G. Littlejohns ◽  
A. Z. Khokhar ◽  
M. Banakar ◽  
W. Cao ◽  
...  

2020 ◽  
Vol 13 (40) ◽  
pp. 4262-4274
Author(s):  
Sandhya Jainth

Objective- To design Graphene-Silicon based rib waveguide and reduce the losses in the strip in order to meet the requirement for ultra-fast & ultrahigh optical bandwidth communication and computing in integrated optical devices. Method –Propagation losses and effective refractive index are the two key parameters. In order to meet the objective, the effects of Graphene for manufacturing passive devices/components in the field of Integrated Photonic like integrated optical waveguide have been analysed by measuring the changes in propagation losses and effective refractive index of the silicon photonics devices for operating at different wavelengths. Findings- We have presented the design and simulation of SOI (Silicon-on-Insulator) platforms with 2D layer materials (graphene) which has been used along with their mode of propagation, effective refractive index (ne f f ), propagation losses (dB/cm) and varying wavelength range for optimum performance. In addition to this, we have also calculated the boundary limit for both the speed and bandwidth. We also reported the development of Silicon rib waveguide, Graphene-Silicon based rib waveguide and Ge on SOI with graphene later at the top of strip waveguide.Minimum loss of strip waveguide is 2.9 dB/cm which has been obtained for Mid-IR wavelength generally used for high power mid- IR sensing.


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