Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a $\hbox{SiO}_{2}$ Photonic Quasi-Crystal Overgrowth
2010 ◽
Vol 31
(6)
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pp. 573-575
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2009 ◽
Vol 30
(11)
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pp. 1152-1154
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2011 ◽
Vol 158
(12)
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pp. H1242
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2015 ◽
Vol 15
(4)
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pp. 454-461
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