Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base
2015 ◽
Vol 36
(5)
◽
pp. 439-441
◽
Keyword(s):
Keyword(s):
2015 ◽
Vol 36
(5)
◽
pp. 436-438
◽