Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors

2017 ◽  
Vol 38 (8) ◽  
pp. 1143-1145 ◽  
Author(s):  
Koji Aoki ◽  
Tokuro Ozawa ◽  
Ying-Ying Chen ◽  
Chun-Pin Fan ◽  
Chuncheng Cheng ◽  
...  
2019 ◽  
Vol 89 (11) ◽  
pp. 1732
Author(s):  
И.Ю. Пашенькин ◽  
М.В. Сапожников ◽  
Н.С. Гусев ◽  
В.В. Рогов ◽  
Д.А. Татарский ◽  
...  

The technology of fabricating of chains of tunnel magnetoresistive (TMR) elements based on CoFe/Al2O3/NiFe nanostructures with pinning on the antiferromagnetic IrMn layer has been developed. The dependence of the magnetoresistance curves on the geometrical parameters of the laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of the unidirectional anisotropy of the fixed CoFe layer has been investigated. The resistance of the chains has been varied from several tens of kΩ to hundreds of MΩ, depending on the thickness of the tunnel dielectric layer. The magnitude of the magnetoresistive effect has been about 10–15%. The suggested technology can be used to make tunnel magnetic field sensors


2020 ◽  
Vol 56 (9) ◽  
pp. 1-9
Author(s):  
Allamys Allan Dias da Silva ◽  
Henrique Patriota Alves ◽  
Felipe Camargo Marcolino ◽  
Jehan Fonseca do Nascimento ◽  
Joaquim Ferreira Martins-Filho

Author(s):  
E. Kaniukov ◽  
V. Bundyukova ◽  
D. Yakimchuk ◽  
A. Shumskaya ◽  
Yu. Bogatyrev ◽  
...  

2006 ◽  
Vol 101 (S1) ◽  
pp. S24-S26
Author(s):  
D. A. Balaev ◽  
K. A. Shaikhutdinov ◽  
S. I. Popkov ◽  
D. M. Gokhfeld ◽  
M. I. Petrov

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