Observation of giant exchange bias effect in Ni-Mn-Ti all-d-metal Heusler alloy

We report a giant exchange bias (EB) field of about 3.68 KOe during field cooled process in all-d-metal Ni40(FeCo)4Mn36Ti20 Heusler alloy. The study of magnetic memory effect and isothermal magnetic relaxation processes suggest that the giant EB field arises due to the possible coexistence of antiferromagnetic (AFM) and ferromagnetic (FM) phase exchange interaction in the studied system at temperatures below 35 K. Furthermore, the temperature and cooling field dependence of EB effect are analyzed which are related to the change in unidirectional anisotropy at FM/AFM interface. The study of a well-established training effect confirms the intrinsic nature of the observed EB behavior. This result will open up a new way towards the development of EB materials considering all-d-metal Heusler alloy systems.

Unidirectional Magnetic Anisotropy in Dense Vertically-Standing Arrays of Passivated Nickel Nanotubes

We report the facile and low-cost preparation as well as detailed characterization of dense arrays of passivated ferromagnetic nickel (Ni) nanotubes (NTs) vertically-supported onto solid Au-coated Si substrates. The proposed fabrication method relies on electrochemical synthesis within the nanopores of a supported anodic aluminum oxide (AAO) template and allows for fine tuning of the NTs ferromagnetic walls just by changing the cathodic reduction potential during the nanostructures’ electrochemical growth. Subsequently, the experimental platform allowed further passivation of the Ni NTs with the formation of ultra-thin antiferromagnetic layers of nickel oxide (NiO). Using adequately adapted magnetic measurements, we afterwards demonstrated that the thickness of the NT walls and of the thin antiferromagneticNiO layer, strongly influences the magnetic behavior of the dense array of exchange-coupled Ni/NiO NTs. The specific magnetic properties of these hybrid ferromagnetic/antiferromagnetic nanosystems were then correlated with the morpho-structural and geometrical parameters of the NTs, as well as ultimately strengthened by additionally-implemented micromagnetic simulations. The effect of the unidirectional anisotropy strongly amplified by the cylindrical geometry of the ferromagnetic/antiferromagnetic interfaces has been investigated with the magnetic field applied both parallel and perpendicular to the NTs axis.

Tuning structural and magnetic properties of Fe oxide nanoparticles by specific hydrogenation treatments

Structural and magnetic properties of Fe oxide nanoparticles prepared by laser pyrolysis and annealed in high pressure hydrogen atmosphere were investigated. The annealing treatments were performed at 200 °C (sample A200C) and 300 °C (sample A300C). The as prepared sample, A, consists of nanoparticles with ~ 4 nm mean particle size and contains C (~ 11 at.%), Fe and O. The Fe/O ratio is between γ-Fe2O3 and Fe3O4 stoichiometric ratios. A change in the oxidation state, crystallinity and particle size is evidenced for the nanoparticles in sample A200C. The Fe oxide nanoparticles are completely reduced in sample A300C to α-Fe single phase. The blocking temperature increases from 106 K in A to 110 K in A200C and above room temperature in A300C, where strong inter-particle interactions are evidenced. Magnetic parameters, of interest for applications, have been considerably varied by the specific hydrogenation treatments, in direct connection to the induced specific changes of particle size, crystallinity and phase composition. For the A and A200C samples, a field cooling dependent unidirectional anisotropy was observed especially at low temperatures, supporting the presence of nanoparticles with core–shell-like structures. Surprisingly high MS values, almost 50% higher than for bulk metallic Fe, were evidenced in sample A300C.

Туннельные магниторезистивные элементы для датчиков магнитного поля

The technology of fabricating of chains of tunnel magnetoresistive (TMR) elements based on CoFe/Al2O3/NiFe nanostructures with pinning on the antiferromagnetic IrMn layer has been developed. The dependence of the magnetoresistance curves on the geometrical parameters of the laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of the unidirectional anisotropy of the fixed CoFe layer has been investigated. The resistance of the chains has been varied from several tens of kΩ to hundreds of MΩ, depending on the thickness of the tunnel dielectric layer. The magnitude of the magnetoresistive effect has been about 10–15%. The suggested technology can be used to make tunnel magnetic field sensors

Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO3(BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co0.9Fe0.1or La0.7Sr0.3MnO3. Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements.

Electric-field control of non-volatile 180° switching of the unidirectional anisotropy field in a multiferroic heterostructure

We investigate the room-temperature, electric-field-mediated, non-volatile 180° switching of the unidirectional anisotropy field in an IrMn/CoFeB/Ta/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure.