scholarly journals Туннельные магниторезистивные элементы для датчиков магнитного поля

2019 ◽  
Vol 89 (11) ◽  
pp. 1732
Author(s):  
И.Ю. Пашенькин ◽  
М.В. Сапожников ◽  
Н.С. Гусев ◽  
В.В. Рогов ◽  
Д.А. Татарский ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Dielectric Layer ◽  
Mutual Orientation ◽  
Geometrical Parameters ◽  
Magnetic Field Sensors ◽  
Unidirectional Anisotropy ◽  
Magnetoresistive Effect

The technology of fabricating of chains of tunnel magnetoresistive (TMR) elements based on CoFe/Al2O3/NiFe nanostructures with pinning on the antiferromagnetic IrMn layer has been developed. The dependence of the magnetoresistance curves on the geometrical parameters of the laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of the unidirectional anisotropy of the fixed CoFe layer has been investigated. The resistance of the chains has been varied from several tens of kΩ to hundreds of MΩ, depending on the thickness of the tunnel dielectric layer. The magnitude of the magnetoresistive effect has been about 10–15%. The suggested technology can be used to make tunnel magnetic field sensors

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors

2017 ◽  
Vol 38 (8) ◽  
pp. 1143-1145 ◽  
Author(s):  
Koji Aoki ◽  
Tokuro Ozawa ◽  
Ying-Ying Chen ◽  
Chun-Pin Fan ◽  
Chuncheng Cheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Field Sensors ◽  
Magnetoresistive Effect

scholarly journals Angular Dependence of the Ferromagnetic Resonance Parameters of [Ti/FeNi]6/Ti/Cu/Ti/[FeNi/Ti]6 Nanostructured Multilayered Elements in the Wide Frequency Range

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 433
Author(s):  
Sergei V. Shcherbinin ◽  
Andrey V. Svalov ◽  
Grigory Y. Melnikov ◽  
Galina V. Kurlyandskaya
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Rf Sputtering ◽  
Magnetization Vector ◽  
Wide Frequency Range ◽  
Easy Magnetization ◽  
Magnetic Field Sensors ◽  
Magnetic Susceptibility Tensor ◽  
Small Magnetic Field ◽  
Lifshitz Equation

Magnetically soft [Ti(6)/FeNi(50)]6/Ti(6)/Cu(500)/Ti(6)/[FeNi(50)/Ti(6)]6 nanostructured multilayered elements were deposited by rf-sputtering technique in the shape of elongated stripes. The easy magnetization axis was oriented along the short size of the stripe using deposition in the external magnetic field. Such configuration is important for the development of small magnetic field sensors employing giant magnetoimpedance effect (GMI) for different applications. Microwave absorption of electromagnetic radiation was experimentally and theoretically studied in order to provide an as complete as possible high frequency characterization. The conductor-backed coplanar line was used for microwave properties investigation. The medialization for the precession of the magnetization vector in the uniformly magnetized GMI element was done on the basis of the Landau–Lifshitz equation with a dissipative Bloch–Bloembergen term. We applied the method of the complex amplitude for the analysis of the rotation of the ferromagnetic GMI element in the external magnetic field. The calculated and experimental dependences for the amplitudes of the imaginary part of the magnetic susceptibility tensor x-component and magnetoabsorption related to different angles show a good agreement.

scholarly journals Spectral Tuning In Quantum Rings By Magnetic Field: Detection From NIR To FIR Regime

2021 ◽  
Author(s):  
Mahdi Solaimani ◽  
Alireza Mobini
Keyword(s):  
Magnetic Field ◽  
Absorption Spectrum ◽  
External Magnetic Field ◽  
Tight Binding ◽  
Ring Structure ◽  
Geometrical Parameters ◽  
Quantum Ring ◽  
Spectral Tuning ◽  
Single Detector ◽  
The Magnetic Field

Abstract In this work, we present a quantum ring structure based on semiconducting QWs for spectral tuning in a wide IR range (1.24- 103 µm) using an external magnetic field. We have used a tight binding method to investigate the optical properties of the structure. Using this method the effect of the external magnetic field on the absorption spectrum has been investigated as the post-processing method. Also, the effect of different geometrical parameters like the number of QWs, QR radius, and constructed material considered as processing methods for tuning absorption. The results show for GaAs based QR with the radius of 100/π consist of 4 QWs, absorption peak linearly increase from 100 meV (12.4 um) in LWIR regime and shift to 200 meV (6.2 um) in MIR regime with increasing external magnetic field. Also for a QR with a radius of 200/π, by changing the magnetic field different absorption peaks appear and disappear in an absorption spectrum and a multi-color detector converts to single-detector in the NIR regime. This results help experimentalist to select proper materials with optimized geometrical parameters to achieve desired wavelength for various detection applications.

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