Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory

Kitae Lee; Sihyun Kim; Jong-Ho Lee; Daewoong Kwon; Byung-Gook Park

doi:10.1109/led.2020.3000766

Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory

IEEE Electron Device Letters ◽

10.1109/led.2020.3000766 ◽

2020 ◽

Vol 41 (8) ◽

pp. 1197-1200

Author(s):

Kitae Lee ◽

Sihyun Kim ◽

Jong-Ho Lee ◽

Daewoong Kwon ◽

Byung-Gook Park

Keyword(s):

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Effect Transistor

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Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor

Journal of Applied Physics ◽

10.1063/1.4833554 ◽

2013 ◽

Vol 114 (19) ◽

pp. 194513 ◽

Cited By ~ 17

Author(s):

Amretashis Sengupta ◽

Santanu Mahapatra

Keyword(s):

Metal Oxide ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Journal of Electronic Materials ◽

10.1007/s11664-017-5823-z ◽

2017 ◽

Vol 47 (2) ◽

pp. 1091-1098 ◽

Cited By ~ 41

Author(s):

Rouzbeh Molaei Imen Abadi ◽

Mehdi Saremi

Keyword(s):

Low Power ◽

Negative Differential Resistance ◽

Field Effect ◽

Resonant Tunneling ◽

Large Scale ◽

Field Effect Transistor ◽

Differential Resistance ◽

Large Scale Integration ◽

Effect Transistor ◽

Scale Integration

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Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806326 ◽

2003 ◽

Author(s):

S.J. Kim ◽

T. Sugaya ◽

M. Ogura ◽

Y. Sugiyama ◽

K. Tomizawa

Keyword(s):

Quantum Wire ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Effect Transistor

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GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

10.1109/tencon.1995.496347 ◽

2002 ◽

Cited By ~ 1

Author(s):

Wen-Chau Liu ◽

Lih-Wen Laih ◽

Jung-Hui Tsai ◽

Kong-Beng Thei ◽

Cheng-Zu Wu ◽

...

Keyword(s):

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Effect Transistor

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Tunable negative differential resistance in anti-dot diffraction field effect transistor

Applied Physics Letters ◽

10.1063/1.118212 ◽

1997 ◽

Vol 70 (5) ◽

pp. 634-636 ◽

Cited By ~ 2

Author(s):

J.-P. Leburton ◽

Yu. B. Lyanda-Geller

Keyword(s):

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Diffraction Field ◽

Effect Transistor

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Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor

Chinese Physics Letters ◽

10.1088/0256-307x/29/8/087303 ◽

2012 ◽

Vol 29 (8) ◽

pp. 087303

Author(s):

Xiao-Na Xu ◽

Xiao-Dong Wang ◽

Yue-Qiang Li ◽

Yan-Ling Chen ◽

An Ji ◽

...

Keyword(s):

Quantum Dot ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Double Peak ◽

Effect Transistor

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Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591451 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1680 ◽

Cited By ~ 2

Author(s):

Takeyoshi Sugaya ◽

Seong-Jin Kim ◽

Tadashi Nakagawa ◽

Yoshinobu Sugiyama ◽

Mutsuo Ogura

Keyword(s):

Quantum Wire ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Effect Transistor

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Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor

Solid-State Electronics ◽

10.1016/s0038-1101(01)00141-1 ◽

2001 ◽

Vol 45 (7) ◽

pp. 1099-1105 ◽

Cited By ~ 2

Author(s):

Seong-Jin Kim ◽

Takeyoshi Sugaya ◽

Mutsuo Ogura ◽

Yoshinobu Sugiyama

Keyword(s):

Quantum Wire ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Gate Length ◽

Length Dependence ◽

Effect Transistor

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Understanding negative differential resistance and region of operation in undoped HfO2-based negative capacitance field effect transistor

Applied Physics A ◽

10.1007/s00339-019-2718-2 ◽

2019 ◽

Vol 125 (6) ◽

Cited By ~ 3

Author(s):

Bhaskar Awadhiya ◽

Pravin N. Kondekar ◽

Ashvinee Deo Meshram

Keyword(s):

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Negative Capacitance ◽

Effect Transistor

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Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

Applied Physics Letters ◽

10.1063/1.1365947 ◽

2001 ◽

Vol 78 (16) ◽

pp. 2369-2371 ◽

Cited By ~ 13

Author(s):

Takeyoshi Sugaya ◽

Mutsuo Ogura ◽

Yoshinobu Sugiyama ◽

Kazuyuki Matsumoto ◽

Kenji Yonei ◽

...

Keyword(s):

Quantum Wire ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Inp Substrate ◽

Effect Transistor

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