Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy

2002 ◽  
Author(s):  
Z. Pan ◽  
Y. Zhang ◽  
Y. Du ◽  
H.X. Han ◽  
R.H. Wu
Keyword(s):  
Raman Spectroscopy ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

1993 ◽  
Vol 309 ◽  
Author(s):  
Ingrid De Wolf ◽  
Rudi Bellens ◽  
Guido Groeseneken ◽  
Herman E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Interface Trap ◽  
Degradation Behaviour ◽  
Hot Carrier ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy ◽  
Hot Carrier Degradation

AbstractNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

2004 ◽  
Vol 21 (2) ◽  
pp. 403-405 ◽  
Author(s):  
Lei Zhen-Kun ◽  
Kang Yi-Lan ◽  
Hu Ming ◽  
Qiu Yu ◽  
Xu Han ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Experimental Analysis ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy

scholarly journals Local stress measurements in laterally oxidized GaAs/AlxGa1−xAs heterostructures by micro-Raman spectroscopy

1997 ◽  
Vol 71 (17) ◽  
pp. 2520-2522 ◽  
Author(s):  
J. P. Landesman ◽  
A. Fiore ◽  
J. Nagle ◽  
V. Berger ◽  
E. Rosencher ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Local Stress ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet'S

1993 ◽  
Vol 308 ◽  
Author(s):  
Ingrid De Wolf ◽  
Rudi bellens ◽  
Guido Groeseneken ◽  
Herman E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Interface Trap ◽  
Degradation Behaviour ◽  
Hot Carrier ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy ◽  
Hot Carrier Degradation

ABSTRACTNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

Stress measurements using ultraviolet micro-Raman spectroscopy

1999 ◽  
Vol 75 (16) ◽  
pp. 2450-2451 ◽  
Author(s):  
K. F. Dombrowski ◽  
I. De Wolf ◽  
B. Dietrich
Keyword(s):  
Raman Spectroscopy ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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