shallow trench isolation
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Author(s):  
N. Vinodhkumar ◽  
G. Durga ◽  
S. Muthumanickam

In this work, the impact of shallow trench isolation (STI) and dual stress liner (DSL) -induced stresses on soft error performance of 30-nm gate length Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET)-based 6T-SRAM cells is studied using process and device simulations. Under nine different stress combinations, i.e., nine different SRAMs, our simulation results show that the stresses introduced from STI and DSL enhance the soft error performance of the cells significantly.





2021 ◽  
Vol 314 ◽  
pp. 107-112
Author(s):  
Philippe Garnier ◽  
Thomas Massin ◽  
Corentin Chatelet ◽  
Emmanuel Oghdayan ◽  
Jeffrey Lauerhaas ◽  
...  

Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas during the STI (Shallow Trench isolation) integration. Oxygen in hot deionized water or hot HF generates this corrosion and selecting a relevant chemical oxide before dispensing hot diluted HF is key in solving the concern.





2019 ◽  
Vol 1 (11) ◽  
pp. 117-124 ◽  
Author(s):  
Arabinda Das ◽  
Andreas Klipp ◽  
Hans-Peter Sperlich ◽  
Robert Nitsche


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