Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy

2001 ◽  
Vol 41 (4) ◽  
pp. 511-515 ◽  
Author(s):  
K.F. Dombrowski ◽  
B. Dietrich ◽  
I. De Wolf ◽  
R. Rooyackers ◽  
G. Badenes
Keyword(s):  
Raman Spectroscopy ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Trench Isolation

Variation of Local Mechanical Stress During the Different Processing Steps of Ic-Isolation: a Micro-Raman Spectroscopy Study

1993 ◽  
Vol 308 ◽  
Author(s):  
Ingrid De Wolf ◽  
Herman E. Maes ◽  
Hans Norström
Keyword(s):  
Raman Spectroscopy ◽  
Integrated Circuits ◽  
Mechanical Stress ◽  
Local Variation ◽  
Micro Raman Spectroscopy ◽  
Induced Stress ◽  
Last Stage ◽  
Edge Force ◽  
Field Oxide ◽  
Processing Steps

ABSTRACTLocal mechanical stress introduced in the silicon substrate during the successive steps of poly-buffered local isolation of MOS integrated circuits is studied with micro-Raman spectroscopy. It is shown that the magnitude and the local variation of the stress is highly affected by the different processing steps. After deposition of the nitride mask, the stress can be described as caused by an edge-force. Field oxidation reduces the mask-induced stress but introduces thermal stress from the field oxide. Also the formation of the bird's beak gives rise to additional local tensile stress, especially at the tip of the bird's beak. Removal of the nitride mask results in a partial relaxation: the stress caused by the bird's beak relaxes. In this last stage of the isolation process, the stress image is mostly determined by the field oxide.

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1949-1952 ◽  
Author(s):  
Seonhaeng Lee ◽  
Dongwoo Kim ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Channel Width ◽  
Device Performance ◽  
Shallow Trench Isolation ◽  
Stress Effects ◽  
Trench Isolation

Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy

1995 ◽  
Vol 402 ◽  
Author(s):  
D. J. Howard ◽  
I. De Wolf ◽  
H. Bender ◽  
K. Maex
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Cross Section ◽  
Line Width ◽  
Silicon Substrate ◽  
Theoretical Modeling ◽  
Micro Raman Spectroscopy ◽  
Thermal Oxide ◽  
Stress Profiles ◽  
Cobalt Silicides

AbstractThe application of CoSi2 in ever shrinking Si CMOS source-drain technologies demands a better knowledge of the states of stress caused by the formation of cobalt-silicides in Si. In this study the variation in local mechanical stress in the silicon substrate near arrays of polycrystalline cobalt-silicide lines was investigated by micro-Raman spectroscopy. The lines were formed by annealing Co sputtered in windows in lithographically patterned, thermal oxide coated Si wafers. The CoSi2 lines varied in width from ˜0.25 to 5.0μ, in number from 2 to 7, and in thickness from ˜ 10 to 230nm. The spacing between lines was 1 and 3 times the line width.Trends in the Si stress between CoSi2 lines are described as a function of line width and line thickness. From the stress measured in the Si, information is obtained about the stress in the CoSi2 lines. In addition, the Si stress due to lines of primarily CoSi phase (monosilicide) is compared with the Si stress due to polycrystalline-CoSi2 (disilicide) lines.Cross section TEM and SEM micrographs of the CoSix line morphologies are used to aid the description of the resulting stress profiles. Some theoretical modeling of the stress in the Si due to the CoSix lines is presented for comparison with the micro-Raman spectroscopy results.

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

2010 ◽  
Vol 39 (6) ◽  
pp. 694-699
Author(s):  
Daisuke Kosemura ◽  
Maki Hattori ◽  
Tetsuya Yoshida ◽  
Toshikazu Mizukoshi ◽  
Atsushi Ogura
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Quality ◽  
Shallow Trench Isolation ◽  
Uv Raman Spectroscopy ◽  
Trench Isolation ◽  
Uv Raman
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