Residual stress measurements in polycrystalline graphite with micro-Raman spectroscopy

Residual stress in coatings often affects the service performance of coatings, and the residual stresses in some local areas even lead to premature failure of coatings. In this work, we characterized the residual stress of local micro-areas of a nanocrystalline Cr2O3 coating deposited on a Si wafer through micro-Raman spectroscopy, including the depositional edge zone where the electrode was placed, the micro-area containing Cr2O3 macroparticles, and other micro-areas vulnerable to cracks. To accurately measure the thickness of the coating, we combined optical interferometry and direct measurement by a profilometer. The results indicate the existence of in-plane tensile residual stress on the Cr2O3 coating. In thick coatings, the residual stress is independent of the coating thickness and is stable between 0.55 GPa and 0.75 GPa. As the coating thickness is less than 0.8 μm, the residual stress is directly related to the coating thickness. This in-plane tensile stress is considered as the origin of the observed microcrack, which can partially release the stress.

Download Full-text

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.95-96.513 ◽

2003 ◽

Vol 95-96 ◽

pp. 513-518 ◽

Cited By ~ 6

Author(s):

Simona Kouteva-Arguirova ◽

Valeri I. Orlov ◽

Winfried Seifert ◽

Jürgen Reif ◽

Hans Richter

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Phase Transformation ◽

Stress Distribution ◽

Residual Stress Distribution ◽

Silicon Phase ◽

Micro Raman Spectroscopy ◽

Different Temperatures

Download Full-text

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

MRS Proceedings ◽

10.1557/proc-309-281 ◽

1993 ◽

Vol 309 ◽

Author(s):

Ingrid De Wolf ◽

Rudi Bellens ◽

Guido Groeseneken ◽

Herman E. Maes

Keyword(s):

Raman Spectroscopy ◽

Tensile Stress ◽

Mechanical Stress ◽

Interface Trap ◽

Degradation Behaviour ◽

Hot Carrier ◽

Stress Measurements ◽

Micro Raman Spectroscopy ◽

Hot Carrier Degradation

AbstractNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

Download Full-text