High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

2019 ◽  
Vol 34 (5) ◽  
pp. 055013 ◽  
Author(s):  
Zhongliang Qiao ◽  
Xiang Li ◽  
Hong Wang ◽  
Te Li ◽  
Xin Gao ◽  
...  
2005 ◽  
Vol 41 (24) ◽  
pp. 1328 ◽  
Author(s):  
Y.Q. Wei ◽  
M. Sadeghi ◽  
S.M. Wang ◽  
P. Modh ◽  
A. Larsson

2002 ◽  
Vol 12 (04) ◽  
pp. 939-968 ◽  
Author(s):  
Mikhail V. Kisin ◽  
Mitra Dutta ◽  
Michael A. Stroscio

We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.


2008 ◽  
Vol 6 (4) ◽  
pp. 268-270
Author(s):  
李林 李林 ◽  
刘国军 刘国军 ◽  
Lin Li Lin Li ◽  
李占国 李占国 ◽  
Guojun Liu Guojun Liu ◽  
...  

1996 ◽  
Vol 143 (1) ◽  
pp. 94-100 ◽  
Author(s):  
H.H. Yee ◽  
Y.P. Song ◽  
R.M. De La Rue ◽  
B. Vögele ◽  
S. Ayling

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