High Sensitivity of Balloon-Like Bent MMI Fiber Low-Temperature Sensor

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Hong Gao ◽  
Yinggang Liu ◽  
Xueguang Qiao ◽  
...  

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M. T. Normurodov ◽  
A. M. Rakhimov ◽  
Z. A. Tursunmetova ◽  
A. K. Tashatov

2016 ◽  
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Zhongmin Cao ◽  
Xiantao Wei ◽  
Lu Zhao ◽  
Yonghu Chen ◽  
Min Yin

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Vol 80-81 ◽  
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Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.


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