Verification of the method of finding a faulty sensor in reduced meters

The reliability of the method for determining a failed sensor in a redundant angular velocity meter (AVM) by means of its experimental verification is considered. The mutual non-orthogonal arrangement of six axes of sensor sensitivity has been optimized to reduce the instrumental errors of each sensitive element and ensure the equality of their contribution. Provides approximately the same sensitivity to the level of error in case of failure. One of the six experimentally obtained sensor signals contains an error that exceeds the specified permissible limit. The algorithm for searching for a sensor is checked, the error of which exceeds the specified one, and which, for this reason, is considered faulty.

Dependence of field-effect biosensor sensitivity on photo-induced processes in Si and its conductivity type

The effect of photoelectron processes in n-Si and p-Si on the glucose sensitivity of a capacitive field-effect biosensor based on electrolyte/oxide/semiconductor structure was investigated. We obtained that illumination of n-Si/SiO2/PEI structure during the GOx adsorption increases the glucose sensitivity by three times compare to GOx adsorption in the dark. In contrast, p-Si illumination during the GOx adsorption led to a decrease in sensor sensitivity from 2.9 mV/mM to 2.2 mV/mM. The result is explained by a change in the density of immobilized GOx molecules due to a change in the electrostatic forces of attraction under illumination and stabilization of the photo-generated charge on the surface electronic states of the Si/SiO2 and SiO2/PEI interfaces after illumination.

Enhanced Sensitivity and Detection of Near-Infrared Refractive Index Sensor with Plasmonic Multilayers

In this work, the multilayer of the surface plasmon resonance (SPR) sensor was optimized to achieve the maximum sensor sensitivity. By optimizing the thickness of the silver layer (Ag) and dielectric films (TiO2 and AlAs), the optimum sensitivity of the SPR sensor could be obtained. The performance of the SPR sensor proposed was compared with control simulations utilizing zinc oxide (ZnO) and molybdenum oxide (MoO3). The numerical results indicate that the figure-of-merits (FOM) of the SPR sensor was achieved around 150/RIU, corresponding to the sensor sensitivity of 162.79°/RIU with the optimized thicknesses of the TiO2, Ag, and AlAs layers of 140 nm, 60 nm, and 25 nm, respectively. This refractive index sensor shows the FOM to have high detection accuracy and high sensitivity that lead to finding potential application in bio-chemical detection with a small volume of liquid used in biological diagnosis.

Computationally-guided tuning of ligand sensitivity in a GPCR-based sensor

Genetically-encoded fluorescent sensors for neuromodulators are increasingly used molecular tools in neuroscience. However, these protein-based biosensors are often limited by the sensitivity of the protein scaffold towards endogenous ligands. Here, we explored the possibility of applying computational design approaches for enhancing sensor sensitivity. Using the dopamine sensor dLight1 as proof of concept, we designed two variants that boost the sensor's potency (EC50) for dopamine and norepinephrine by up to 5- and 15-fold, respectively. Interestingly, the largest effects were obtained through improved designed allosteric transmission in the transmembrane region of the sensor. Our approach should prove generally useful for enhancing sensing capabilities of a large variety of neuromodulator sensors.

Optimal design of piezoelectric cantilever velocity sensor based on PVDF

The response charge of piezoelectric speed sensors using a conventional rectangular cantilever is low, which also causes a low sensitivity in speed measurement. To improve the sensor sensitivity, a piezoelectric speed sensor based on a streamlined piezoelectric cantilever is employed in this paper. Furthermore, a theoretical optimization model of the sensor based on Bernstein polynomial equation is established, and a simulation optimization flow work is also proposed. With method of moving asymptotes (MMA) algorithm, more charge output can be obtained than before. The simulation results show that the optimized sensor can output a voltage of 416 mV and obtain a sensitivity of 52 mV/m⋅s−1 when the input speed is 8 m/s. As compared with the values of 300 mV and 37.5 mV/m⋅s−1 in the un-optimized case, the improvement in the sensor sensitivity is up to 38%, which confirms the effectiveness of the proposed method.

Chemical Sensor for Detection of Lead Levels in Herbal Medicine

A new tube type Pb2+ sensor made from two types of mixtures, namely clay-PbI2 and chitosan-PbI2 were prepared. An electromotive force (EMF) with Ag/AgCl as the reference electrode was used as the output signal. The highest performance of the Pb2+ sensor from clay-PbI2 was obtained at Pb2+ solutions in HNO3 and pH 3 with sensor sensitivity of 20.67 mV/decade. The highest performance of the Pb2+ sensor from chitosan-PbI2 was obtained at Pb2+ solutions in demineralized water with sensor sensitivity of 32.49 mV / decade. Application of the two sensors on several commercial herbal samples resulted in an average recovery of 85.62% and 94.10% for sensor from chitosan-PbI2 and clay-PbI2, respectively

STUDY OF A FREQUENCY OUTPUT TEMPERATURE SENSOR BASED ON A QUANTUM HETEROSTRUCTURE WITH A NEGATIVE DIFFERENTIAL RESISTANCE

Physical processes in a quantum two-barrier heterostructure, which is the basis for the development of tunnel-resonant diodes, are considered. These studies have shown that tunnel resonance diodes can be used as temperature sensors with a frequency output signal. The use of devices with negative differential resistance makes it possible to significantly simplify the design of temperature sensors in the entire radio frequency range, at which, depending on the operating modes of the sensor, an output signal can be obtained both in the form of harmonic oscillations and in the form of impulse oscillations of a special form. The study of the characteristics of the sensor is based on the equivalent circuit of the tunnel-resonant diode, which takes into account its capacitive and inductive properties. The current-voltage characteristic of the sensor has a falling section, which is responsible for the appearance of a negative differential resistance in this section. The descending section arises due to a decrease in the current that flows through the double-barrier quantum heterostructure, with an increase in voltage. A decrease in the current occurs due to a decrease in the transparency coefficient of the potential barriers of the heterostructure. A mathematical model of the temperature sensor has been developed, on the basis of which the analytical dependences of the change in the elements of the equivalent circuit of the sensor on temperature, as well as the transformation function and sensitivity, have been determined. It is shown that the main contribution to changes in the conversion function and sensor sensitivity is made by the change in the negative differential resistance with a change in temperature. This, in turn, results in different readings of the instrument’s output frequency. The sensor sensitivity was varied from 480 kHz/0С to 220 kHz/0С in the temperature range from -150 0С to 50 0С.