High-frequency large-signal physical modeling of microwave semiconductor devices

Proceedings of 1995 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.1995.405930 ◽

2002 ◽

Author(s):

M.A. AlSunaidi ◽

S.M. El-Ghazaly

Keyword(s):

Physical Modeling ◽

High Frequency ◽

Semiconductor Devices ◽

Large Signal ◽

Microwave Semiconductor Devices

Download Full-text

A Versatile Large-Signal High-Frequency Arbitrary Waveform Generator Using GaN Devices

2019 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec.2019.8721961 ◽

2019 ◽

Author(s):

Hector Sarnago ◽

J. M. Burdio ◽

Tomas Garcia-Sanchez ◽

Lluis Mir ◽

O. Lucia

Keyword(s):

High Frequency ◽

Waveform Generator ◽

Arbitrary Waveform Generator ◽

Large Signal ◽

Arbitrary Waveform

Download Full-text

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

2008 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2008.4633082 ◽

2008 ◽

Author(s):

A. A. Lisboa de Souza ◽

J. C. Nallatamby ◽

M. Prigent ◽

J. Obregon

Keyword(s):

Semiconductor Devices ◽

Microwave Semiconductor Devices

Download Full-text

Microwave Semiconductor Devices

Physics Bulletin ◽

10.1088/0031-9112/22/10/021 ◽

1971 ◽

Vol 22 (10) ◽

pp. 605-605

Author(s):

I B Bott

Keyword(s):

Semiconductor Devices ◽

Microwave Semiconductor Devices

Download Full-text

Application of CVD-diamond substrates for microwave semiconductor devices

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) ◽

10.1109/crmico.2000.1255835 ◽

2000 ◽

Author(s):

K.V. Dudinov ◽

A.M. Temnov ◽

V.G. Lapin ◽

V.V. Averin

Keyword(s):

Semiconductor Devices ◽

Cvd Diamond ◽

Microwave Semiconductor Devices

Download Full-text

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734641 ◽

2018 ◽

Author(s):

Yu Chen ◽

Chengmin Li ◽

Wuhua Li ◽

Xiangning He ◽

Saijun Mao ◽

...

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

High Frequency ◽

Semiconductor Devices ◽

Power Conversion ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

High frequency high voltage power conversion with silicon carbide power semiconductor devices

2016 6th Electronic System-Integration Technology Conference (ESTC) ◽

10.1109/estc.2016.7764721 ◽

2016 ◽

Author(s):

Saijun Mao ◽

Tao Wu ◽

Xi Lu ◽

Jelena Popovic ◽

Jan Abraham Ferreira

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

High Frequency ◽

Semiconductor Devices ◽

Power Conversion ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Small- and large-signal trap-assisted GR noise modeling in semiconductor devices

10.1117/12.547063 ◽

2004 ◽

Author(s):

Simona Donati Guerrieri ◽

Gabriele Conte ◽

Fabrizio Bonani ◽

Giovanni Ghione

Keyword(s):

Semiconductor Devices ◽

Large Signal ◽

Download Full-text

A Stochastic Large-Signal Model for Printed High-Frequency Rectifiers Used for Efficient Generation of Higher Harmonics

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2020.2990561 ◽

2020 ◽

Vol 68 (6) ◽

pp. 2151-2160

Author(s):

Kevin Neumann ◽

Laura Kuhnel ◽

Fabian Langer ◽

Andreas Rennings ◽

Niels Benson ◽

...

Keyword(s):

High Frequency ◽

Large Signal ◽

Signal Model ◽

Higher Harmonics ◽

Efficient Generation

Download Full-text

Progress of Microwave Semiconductor Devices in Japan

10.1109/mwsym.1981.1129860 ◽

2005 ◽

Author(s):

K. Sekido

Keyword(s):

Semiconductor Devices ◽

Microwave Semiconductor Devices

Download Full-text

High-frequency equivalent circuit of GaAs FETs for large-signal applications

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.102964 ◽

1991 ◽

Vol 39 (2) ◽

pp. 224-229 ◽

Author(s):

M. Berroth ◽

R. Bosch

Keyword(s):

Equivalent Circuit ◽

High Frequency ◽

Download Full-text