2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

2018 ◽

Author(s):

Cailin Wang ◽

Rui Han ◽

Lei Zhang

Keyword(s):

Pin Diode

Download Full-text

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734649 ◽

2018 ◽

Author(s):

Lin Fan ◽

Christian K. Lumby ◽

Arnold Knott ◽

Ivan Harald Holger Jorgensen

Keyword(s):

Switched Capacitor

Download Full-text

Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734580 ◽

2018 ◽

Author(s):

Jiandong Dai ◽

Ying Li ◽

Xinbo Ruan

Keyword(s):

Class E

Download Full-text

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734641 ◽

2018 ◽

Author(s):

Yu Chen ◽

Chengmin Li ◽

Wuhua Li ◽

Xiangning He ◽

Saijun Mao ◽

...

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

High Frequency ◽

Semiconductor Devices ◽

Power Conversion ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734694 ◽

2018 ◽

Author(s):

Haojie Li ◽

Yuming Zhang ◽

Xiaoyan Tang ◽

Dongxun Li ◽

Qingwen Song

Keyword(s):

Radiation Effects ◽

Wet Oxidation ◽

Mos Capacitor

Download Full-text

A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734617 ◽

2018 ◽

Author(s):

Pengcheng Han ◽

Xiaoqiong He ◽

Yang Chen ◽

Xu Peng

Keyword(s):

Power Supply ◽

Power Supply System ◽

Magnetic Levitation ◽

Supply System ◽

Auxiliary Power

Download Full-text

A Reliable Double-Sided 1200-V/600-A Multichip Half-bridge Insulated Gate Bipolar Transistor (IGBT) Module with High Power Density

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734637 ◽

2018 ◽

Cited By ~ 1

Author(s):

Zheng Wang ◽

Yunhui Mei ◽

Wen Liu ◽

Yijing Xie ◽

Shancan Fu ◽

...

Keyword(s):

Power Density ◽

High Power ◽

Bipolar Transistor ◽

High Power Density ◽

Insulated Gate Bipolar Transistor ◽

Igbt Module

Download Full-text

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734578 ◽

2018 ◽

Author(s):

Chong Wang ◽

Xin Wang ◽

Xue-Feng Zheng ◽

Qing He ◽

Ji Wu ◽

...

Keyword(s):

Enhancement Mode ◽

Gan Heterostructure ◽

Double Channel

Download Full-text

Common Mode Votage Compensation for Capacitor Voltage Ripple Reduction of 7-kV SiC-based Modular Multilevel Converter

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734541 ◽

2018 ◽

Author(s):

Ziwei Ke ◽

Jianyu Pan ◽

Risha Na ◽

Fan Zhang ◽

He Li ◽

...

Keyword(s):

Modular Multilevel Converter ◽

Multilevel Converter ◽

Common Mode ◽

Voltage Ripple ◽

Capacitor Voltage ◽

Ripple Reduction

Download Full-text

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734600 ◽

2018 ◽

Author(s):

Qing Zhu ◽

Bin Hou ◽

Ling Yang ◽

Lixiang Chen ◽

Meng Zhang ◽

...

Keyword(s):

Reverse Bias ◽

Bias Stress ◽

Gan Hemts

Download Full-text

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A new termination structure with FLR and trench for 3.3kV SiC PiN diode

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet

A Reliable Double-Sided 1200-V/600-A Multichip Half-bridge Insulated Gate Bipolar Transistor (IGBT) Module with High Power Density

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

Common Mode Votage Compensation for Capacitor Voltage Ripple Reduction of 7-kV SiC-based Modular Multilevel Converter

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Export Citation Format

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A new termination structure with FLR and trench for 3.3kV SiC PiN diode

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet

A Reliable Double-Sided 1200-V/600-A Multichip Half-bridge Insulated Gate Bipolar Transistor (IGBT) Module with High Power Density

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

Common Mode Votage Compensation for Capacitor Voltage Ripple Reduction of 7-kV SiC-based Modular Multilevel Converter

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications