2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

116

(FIVE YEARS 0)

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(FIVE YEARS 0)

Published By IEEE

9781538643921

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High-Voltage 4H-SiC GTO Thyristor with Multiple Floating Zone Junction Termination Extension

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734630 ◽

2018 ◽

Author(s):

Xingliang Xu ◽

Kun Zhou ◽

Lin Zhang ◽

Zhiqiang Li ◽

Lianghui Li ◽

...

Keyword(s):

High Voltage ◽

Floating Zone

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Thermo-Mechanical Analysis of SiC Schottky-Barrier Diode Press-Pack Packaging using Finite Element Simulation

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734582 ◽

2018 ◽

Author(s):

Zhao Wang ◽

Ke Feng ◽

Xiaofei Yang

Keyword(s):

Finite Element ◽

Finite Element Simulation ◽

Schottky Barrier ◽

Mechanical Analysis ◽

Schottky Barrier Diode ◽

Element Simulation

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Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734545 ◽

2018 ◽

Author(s):

Ling Yang ◽

Bin Hou ◽

Meng Zhang ◽

Qing Zhu ◽

Jiejie Zhu ◽

...

Keyword(s):

Gan Hemts ◽

Source Contact

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Aging of GaN GIT under repetitive short-circuit tests

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734539 ◽

2018 ◽

Author(s):

J-Z. Fu ◽

F. Fouquet ◽

M. Kadi ◽

P. Dherbecourt

Keyword(s):

Short Circuit

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A new termination structure with FLR and trench for 3.3kV SiC PiN diode

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734648 ◽

2018 ◽

Author(s):

Cailin Wang ◽

Rui Han ◽

Lei Zhang

Keyword(s):

Pin Diode

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An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734649 ◽

2018 ◽

Author(s):

Lin Fan ◽

Christian K. Lumby ◽

Arnold Knott ◽

Ivan Harald Holger Jorgensen

Keyword(s):

Switched Capacitor

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Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734580 ◽

2018 ◽

Author(s):

Jiandong Dai ◽

Ying Li ◽

Xinbo Ruan

Keyword(s):

Class E

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Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734641 ◽

2018 ◽

Author(s):

Yu Chen ◽

Chengmin Li ◽

Wuhua Li ◽

Xiangning He ◽

Saijun Mao ◽

...

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

High Frequency ◽

Semiconductor Devices ◽

Power Conversion ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734694 ◽

2018 ◽

Author(s):

Haojie Li ◽

Yuming Zhang ◽

Xiaoyan Tang ◽

Dongxun Li ◽

Qingwen Song

Keyword(s):

Radiation Effects ◽

Wet Oxidation ◽

Mos Capacitor

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A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734617 ◽

2018 ◽

Author(s):

Pengcheng Han ◽

Xiaoqiong He ◽

Yang Chen ◽

Xu Peng

Keyword(s):

Power Supply ◽

Power Supply System ◽

Magnetic Levitation ◽

Supply System ◽

Auxiliary Power

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2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High-Voltage 4H-SiC GTO Thyristor with Multiple Floating Zone Junction Termination Extension

Thermo-Mechanical Analysis of SiC Schottky-Barrier Diode Press-Pack Packaging using Finite Element Simulation

Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology

Aging of GaN GIT under repetitive short-circuit tests

A new termination structure with FLR and trench for 3.3kV SiC PiN diode

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications