High frequency high voltage power conversion with silicon carbide power semiconductor devices

2016 ◽  
Author(s):  
Saijun Mao ◽  
Tao Wu ◽  
Xi Lu ◽  
Jelena Popovic ◽  
Jan Abraham Ferreira
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Frequency ◽  
Semiconductor Devices ◽  
Power Conversion ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

2014 ◽  
Vol 1070-1072 ◽  
pp. 1241-1245
Author(s):  
Li Jun Xie ◽  
Xian Zheng Liu ◽  
Jin Yuan Li ◽  
Kun Shan Yu
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Frequency ◽  
Simulation Analysis ◽  
Pwm Inverter ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Snubber Circuit ◽  
Parasitic Parameters

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.

scholarly journals Capacitive methods for testing of power semiconductor devices

2015 ◽  
Vol 28 (3) ◽  
pp. 495-505 ◽  
Author(s):  
Vaclav Papez ◽  
Jiri Hájek ◽  
Bedrich Kojecký
Keyword(s):  
High Voltage ◽  
Semiconductor Devices ◽  
Theoretical Estimation ◽  
Voltage Distribution ◽  
Power Semiconductor ◽  
Measured Voltage ◽  
Power Semiconductor Devices ◽  
Electrical Capacity ◽  
Resonance Principle ◽  
In Series

Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. The measurement of the voltage-capacity dependence using the resonance principle is illustrated on the samples of 4kV and 6kV thyristors. The correspondence between theoretical estimation of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions.

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