Dual Gate and Drain Supply Modulation of an X-Band PA

Author(s):  
Maxwell R. Duffy ◽  
Gregor Lasser ◽  
Tommaso Cappello ◽  
Zoya Popovic
Keyword(s):  
X Band ◽  
Author(s):  
Maxwell R. Duffy ◽  
Gregor Lasser ◽  
Jason Vance ◽  
Morten Olavsbraten ◽  
Taylor Barton ◽  
...  

Author(s):  
Christos Tsironis ◽  
Rainer Stahlmann ◽  
Frederik Ponse
Keyword(s):  
X Band ◽  

1997 ◽  
Vol 483 ◽  
Author(s):  
R. Hickman ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
J. J. Klaassen ◽  
A. M. Wowchack ◽  
...  

AbstractX-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.


1979 ◽  
Vol 15 (17) ◽  
pp. 524 ◽  
Author(s):  
R. Stahlmann ◽  
C. Tsironis ◽  
F. Ponse ◽  
H. Beneking
Keyword(s):  
X Band ◽  

2020 ◽  
Vol 14 (12) ◽  
pp. 1347-1354
Author(s):  
Maxwell R. Duffy ◽  
Gregor Lasser ◽  
Tommaso Cappello ◽  
Zoya Popović
Keyword(s):  
X Band ◽  

Author(s):  
W.C. Tsai ◽  
S.F. Paik ◽  
B.S. Hewitt ◽  
N. Gregory ◽  
P. Tanzi
Keyword(s):  
X Band ◽  

2002 ◽  
Vol 25 (1) ◽  
pp. 23-46
Author(s):  
Ptros S. Tsenes ◽  
Giorgos E. Stratakos ◽  
Nikolaos K. Uzunoglu

In this paper two active MMIC mixers for RF front-end applications are described. A down-converter that converts an RF signal(fRF=10.45 GHz)into an IF signal(fIF=0.95 GHz)using an LO signal(fLO=9.5 GHz)and an up-converter that performs the opposite process have been fabricated. The down-converter is designed using the topology of a dual-gate pHEMT, while the up-converter is implemented in the form of a double balanced mixer using the topology of the Gilbert cell and the occupied areas are approximately0.78 mm2and3.86 mm2, respectively. Both mixers present conversion gain, very low input and output return losses, very good isolation between all of their ports and the required LO power is quite low, while the up-converter contains on chip, except for the dc-bias and matching sub-circuits, the required LO and RF baluns. Both circuits have been fabricated using the H-40 process of GEC-Marconi. Section 1 presents fundamentals on mixer theory and mixer design while in Section 2 the characteristics of H-40 process are described. In Section 3 and in Section 4 the designing, the simulated and the measured results of the down-converter and the up-converter are presented, respectively.


Author(s):  
S.C. Cripps ◽  
O. Nielsen ◽  
J. Cockrill

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