scholarly journals Laser assisted imprint of silicon nanostructure with good crystal quality

Author(s):  
Eih-Zhe Liang ◽  
Zhao-Ren Huang ◽  
Ching-Fuh Lin ◽  
Chieh-Hsiung Kuan
1991 ◽  
Vol 220 ◽  
Author(s):  
W. -X. Ni ◽  
A. Henry ◽  
J. O. Ekberg ◽  
G. V. Hansson

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.


2006 ◽  
Vol 11-12 ◽  
pp. 15-18 ◽  
Author(s):  
L. Luo ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Masaki Tanemura ◽  
Miwa Kawasaki

The photocatalytic effects of 4 samples, which TiO2 layer uniformly coated on Al fiber, are evaluated by NOx removal. An anatase TiO2 coating with good crystal quality and high Ti content exhibits the best photocatalytic effect on NOx removal. It is coincidence with the results of XRD, XPS results for 4 samples. The photocatalytic ability is enhanced by the introduction of H2O2 due to the formation of large amount OH radicals.


2020 ◽  
Vol 12 (2) ◽  
pp. 02012-1-02012-5
Author(s):  
Dilip Maske ◽  
◽  
Manisha Deshpande ◽  
Dattatray Gadkari ◽  
◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.


Author(s):  
V. Stojanoff ◽  
A. Vahedi-Faridi ◽  
J. I. Yeh
Keyword(s):  

2011 ◽  
Vol 32 (12) ◽  
pp. 1701-1703 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Young-Su Kim ◽  
...  

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