In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Toxicity of nanomaterials due to photochemical degradation and the release of heavy metal ions

The cytotoxicity and genotoxicity of PbS quantum dots by photochemical etching and the release of lead ions.

Металл-усиленное фотохимическое травление N- и Ga-полярных эпитаксиальных слоев GaN

The results of the study of photochemical etching without the application of external voltage, structures with Ga- and N-polar GaN layers synthesized by molecular beam epitaxy with plasma activation of nitrogen are presented. It is shown that the etching rate of layers with different polarities is very different. In this case, the use of gold-based masks for etching of GaN layers instead of titanium also makes it possible to increase the etching rate of the layers.

Buckling Porous SiC Membranes

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.