Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes

Author(s):  
M. Boscardin ◽  
M. Bruzzi ◽  
A. Candelori ◽  
G.-F. Dalla Betta ◽  
E. Focardi ◽  
...  
2005 ◽  
Vol 483-485 ◽  
pp. 389-392 ◽  
Author(s):  
A. Lo Giudice ◽  
P. Oliveira ◽  
F. Fizzotti ◽  
Claudio Manfredotti ◽  
E. Vittone ◽  
...  

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.


2005 ◽  
Vol 52 (4) ◽  
pp. 1048-1053 ◽  
Author(s):  
M. Boscardin ◽  
M. Bruzzi ◽  
A. Candelori ◽  
G.-F.D. Betta ◽  
E. Focardi ◽  
...  

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  

2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.


Author(s):  
Takeshi Ohshima ◽  
Takahiro Satoh ◽  
Masakazu Oikawa ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
...  

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