Study of Ion Induced Damage in 4H-SiC

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

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Effect of neutron irradiation on charge collection efficiency in 4H-SiC Schottky diode

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2013.09.041 ◽

2014 ◽

Vol 735 ◽

pp. 218-222 ◽

Cited By ~ 14

Author(s):

Jian Wu ◽

Yong Jiang ◽

Jiarong Lei ◽

Xiaoqiang Fan ◽

Yu Chen ◽

...

Keyword(s):

Neutron Irradiation ◽

Schottky Diode ◽

Collection Efficiency ◽

Charge Collection ◽

Charge Collection Efficiency

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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes

IEEE Symposium Conference Record Nuclear Science 2004. ◽

10.1109/nssmic.2004.1462353 ◽

2005 ◽

Cited By ~ 2

Author(s):

M. Boscardin ◽

M. Bruzzi ◽

A. Candelori ◽

G.-F. Dalla Betta ◽

E. Focardi ◽

...

Keyword(s):

Collection Efficiency ◽

Radiation Hardness ◽

Charge Collection ◽

Charge Collection Efficiency

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Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

MRS Proceedings ◽

10.1557/proc-302-381 ◽

1993 ◽

Vol 302 ◽

Cited By ~ 2

Author(s):

W. Bencivelli ◽

E. Bertolucci ◽

U. Bottigli ◽

A. Cavallini ◽

S. D'Auria ◽

...

Keyword(s):

Gallium Arsenide ◽

Room Temperature ◽

Detection Efficiency ◽

Collection Efficiency ◽

Experimental Results ◽

Simulation Program ◽

Charge Collection ◽

X Rays ◽

Charge Collection Efficiency ◽

Digital Radiology

ABSTRACTGallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

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The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.961 ◽

2007 ◽

Vol 556-557 ◽

pp. 961-964 ◽

Cited By ~ 2

Author(s):

Alexander M. Ivanov ◽

Nikita B. Strokan ◽

Alexander A. Lebedev ◽

Vitalii V. Kozlovski

Keyword(s):

Experimental Data ◽

Collection Efficiency ◽

Charge Collection ◽

Carrier Localization ◽

Charge Collection Efficiency ◽

Radiation Induced ◽

Nuclear Detectors ◽

Two Parameter ◽

Mev Protons ◽

Α Particles

The charge collection efficiency (ССЕ) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm-2 has been studied. Nuclear spectrometric techniques with 5.4 MeV α-particles were employed to test the detectors. The concentration of primarily created defects was estimated to be 4×1016 cm-3. A strong compensation of SiC was observed, which allowed connection of the structure in the forward mode. The experimental data obtained were processed using a simple two-parameter model of signal formation. The model makes it possible to separate the contributions of electrons and holes to the ССЕ. An additional irradiation at a fluence of 2×1014 cm-2 reduced the ССЕ value by a factor of 2 and gave rise to polarization. The latter indicates that radiation-induced centers are not only actively involved in carrier localization (with a decrease in the lifetime), but also in transformation of the electric field within the detector.

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Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2005.852721 ◽

2005 ◽

Vol 52 (4) ◽

pp. 1048-1053 ◽

Cited By ~ 6

Author(s):

M. Boscardin ◽

M. Bruzzi ◽

A. Candelori ◽

G.-F.D. Betta ◽

E. Focardi ◽

...

Keyword(s):

Collection Efficiency ◽

Radiation Hardness ◽

Charge Collection ◽

Charge Collection Efficiency ◽

Thin Silicon

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Barrier Effect of Retrograde Well Against Ion-Induced-Charge Carriers

MRS Proceedings ◽

10.1557/proc-316-313 ◽

1993 ◽

Vol 316 ◽

Author(s):

Hirokazu Sayama ◽

Takehisa Kishimoto ◽

Mikio Takai ◽

Hiroshi Kimura ◽

Yoshikazu Ohno ◽

...

Keyword(s):

Focused Ion Beam ◽

Collection Efficiency ◽

Ion Beam ◽

Charge Carriers ◽

Charge Collection ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Charge Collection Efficiency ◽

Mev Protons ◽

Good Agreement

ABSTRACTThe charge collection efficiency of a diode with a retrograde well was estimated using focused ion beam irradiation at 400 keV and 2 MeV. The retrograde well was found to effectively suppress a collection of charge carriers created by energetic particles. The charge collection efficiency of the diode with the retrograde well was ~ 25 % lower than that with the conventional well when 400 keV ~ 2 MeV protons were irradiated normal to diodes. This result was in good agreement with device simulation.

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