A generalised rate equation model for moderately broad area laser diodes and its application to high-power lasers with selective quantum-well intermixing for improved beam quality

2008 ◽  
Author(s):  
E.A. Avrutin ◽  
B.M. Russell ◽  
D. Yanson
Keyword(s):  
Quantum Well ◽  
Rate Equation ◽  
High Power ◽  
Beam Quality ◽  
Laser Diodes ◽  
Equation Model ◽  
Broad Area ◽  
Quantum Well Intermixing ◽  
High Power Lasers ◽  
Rate Equation Model

scholarly journals Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates

2019 ◽  
Vol 9 (19) ◽  
pp. 4160 ◽  
Author(s):  
Ryu ◽  
Ryu ◽  
Onwukaeme
Keyword(s):  
Quantum Well ◽  
Rate Equation ◽  
Equation Model ◽  
Efficiency Droop ◽  
Internal Electric Field ◽  
Active Volume ◽  
Light Emitting ◽  
Rate Equation Model ◽  
Sapphire Substrates ◽  
The Difference

We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates and analyzed the efficiency droop characteristics using the rate equation model with reduced effective active volume. The efficiency droop of the LED sample on silicon was observed to be reduced considerably compared with that of the identical LED sample on sapphire substrates. When the measured external quantum efficiency was fitted with the rate equation model, the effective active volume of the MQW on silicon was found to be ~1.45 times larger than that of the MQW on sapphire. The lower efficiency droop in the LED on silicon could be attributed to its larger effective active volume compared with the LED on sapphire. The simulation results showed that the effective active volume decreased as the internal electric fields increased, as a result of the reduced overlap of the electron and hole distribution inside the quantum well and the inhomogeneous carrier distribution in the MQWs. The difference in the internal electric field of the MQW between the LED on silicon and sapphire could be a major reason for the difference in the effective active volume, and consequently, the efficiency droop.

Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures

2001 ◽  
Vol 192 (1-2) ◽  
pp. 69-75 ◽  
Author(s):  
R. Hülsewede ◽  
J. Sebastian ◽  
H. Wenzel ◽  
G. Beister ◽  
A. Knauer ◽  
...  
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Optical Cavity ◽  
Laser Diodes ◽  
Broad Area

High-Power Angled Broad-Area 1.3-<tex>$muhboxm$</tex>Laser Diodes With Good Beam Quality

2004 ◽  
Vol 16 (11) ◽  
pp. 2412-2414 ◽  
Author(s):  
C.-H. Tsai ◽  
Y.-S. Su ◽  
C.-W. Tsai ◽  
D.P. Tsai ◽  
C.-F. Lin
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Laser Diodes ◽  
Broad Area ◽  
Good Beam Quality

Rate equation model of high‐temperature performance of InGaAsP quantum well lasers

1995 ◽  
Vol 66 (26) ◽  
pp. 3606-3608 ◽  
Author(s):  
A. A. Bernussi ◽  
J. Pikal ◽  
H. Temkin ◽  
D. L. Coblentz ◽  
R. A. Logan
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Rate Equation ◽  
Equation Model ◽  
Quantum Well Lasers ◽  
Rate Equation Model ◽  
Temperature Performance
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