Structural and electrical characterization of silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

2017 ◽  
Author(s):  
Philippe K. Chow ◽  
Quentin Hudspeth ◽  
Jeffrey Warrender
Keyword(s):  
Pulsed Laser ◽  
Electrical Characterization ◽  
Gold Films ◽  
Laser Melting ◽  
Thick Gold

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

2018 ◽  
Vol 123 (13) ◽  
pp. 133101 ◽  
Author(s):  
Philippe K. Chow ◽  
Wenjie Yang ◽  
Quentin Hudspeth ◽  
Shao Qi Lim ◽  
Jim S. Williams ◽  
...  
Keyword(s):  
Infrared Absorption ◽  
Pulsed Laser ◽  
Gold Films ◽  
Laser Melting ◽  
Thick Gold

Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

2010 ◽  
Author(s):  
K. Rodrigo ◽  
S. Heiroth ◽  
M. Lundberg ◽  
N. Bonanos ◽  
K. Mohan Kant ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Doped Ceria

Structural and Electrical Characterization of Lead Metaniobate Thin Films Deposited by Pulsed Laser Ablation

2006 ◽  
Vol 335 (1) ◽  
pp. 201-209 ◽  
Author(s):  
F. Cardoso ◽  
B. G. Almeida ◽  
P. Caldelas ◽  
J. A. Mendes ◽  
J. Barbosa
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Pulsed Laser Ablation ◽  
Lead Metaniobate

scholarly journals Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Eric García-Hemme ◽  
Rodrigo García-Hernansanz ◽  
Javier Olea ◽  
David Pastor ◽  
Álvaro del Prado ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculations ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Third Generation ◽  
Laser Melting ◽  
Intermediate Band ◽  
Processing Cost ◽  
Novel Processing ◽  
Band Material

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1in the photons energy range from 1.1 to 0.6 eV.

Electrical characterization of Si doped AlN films synthesized by pulsed laser deposition

2015 ◽  
Vol 70 (1) ◽  
pp. 10102
Author(s):  
Simeon Simeonov ◽  
Silvia Bakalova ◽  
Anna Szekeres ◽  
Ivaylo Minkov ◽  
Gabriel Socol ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Si Doped
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