Improved Optical and Electronic Properties of Single-Layer MoS2 by Co Doping for Promising Intermediate - Band Materials

Owing to its unique optical and electronic characteristics, two-dimensional MoS2 has been widely explored in the past few years. Using first-principle calculations, we shed light on that the substitutional doping of Co can induce the half-filled intermediate states in the band gap of monolayer MoS2. The calculated absorption spectrum presents an enhancement of the low-energy photons (0.8 eV–1.5 eV), which is desired for intermediate-band solar cells. When the doping concentration increases, the reflectivity of the infrared and visible light (0.8 eV-4.0 eV) reduces, resulting in an improved photovoltaic efficiency of the material. Our results shed light on the application of heavily Co-doped MoS2 as intermediate band solar cell material.

Numerical Investigation into Photovoltaic Performance of Organolead Trihalide Perovskite Quantum Dot Intermediate Band Solar Cell

In this work, an intermediate band solar cell (IBSC) model consisting of MAPbI3 quantum dots (QD) and MAPbCl3 barrier material is explored analytically with MATLAB. Titanium di-oxide (TiO2) is used as transport layer for electron and Spiro-OMeTAD (2,2',7,7'-tet-rakis (N,N'-di-p-methoxyphenylamine)–9,9' spirobifluorene) is used as transport layer for hole. Fluorine-doped tin oxide (FTO) and Silver (Ag) is used as top and bottom contact. The impact of QD size and dot spacing on the key parameters of MAPbI3 QD-IBSC is illustrated throughout this paper. In order to identify the number of IB in a single regime, Schrödinger equation is solved as a function of host energy gap using Kronig–Penney model. The detailed balance limit assumptions with unity fill factor are applied to extract highest efficiency from the system. For any case, face centered cubic (FCC) crystal structure is assumed. The (100) crystal orientation is considered as charge carriers from n–region to p–region transport in this orientation. Major performance indicators of the device such as photocurrent intensity Jsc, open circuit voltage Voc and power conversion efficiency η have been delineated. Highest efficiency of 63% is attained for dot size of 4 nm and dot spacing of 1.5 nm.

Prediction of intermediate band in Ti/V doped γ-In2S3

We find the band structure of In1.5V0.5S3 with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2S3.

Sn-doped CdS: A New Intermediate Band Material for Solar Cells

In this paper, the electronic structure and optical properties of CdS doped by Sn with different concentrations were investigated by first principles. The calculation results of electronic structure show that the doping of Sn can produce a deep impurity level band in the band structure of CdS. The calculation results of optical property show that Sn doping can increase the light absorption coefficient and conductivity of CdS. The overall calculation results show that Sn doping can produce stable intermediate band structure and significantly improve the optical property of CdS.