Research on Different Current Components Compensation Techniques in Nonsinusoidal Voltage Conditions

2020 ◽  
Author(s):  
Maksim Dybko
Keyword(s):  
Nonsinusoidal Voltage

scholarly journals IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

2015 ◽  
Vol 2015 ◽  
pp. 1-11
Author(s):  
Bhadrani Banerjee ◽  
Anvita Tripathi ◽  
Adrija Das ◽  
Kumari Alka Singh ◽  
Aritra Acharyya ◽  
...  
Keyword(s):  
Comparative Study ◽  
Millimeter Wave ◽  
Gaas Substrate ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Atmospheric Window ◽  
Atmospheric Windows ◽  
Nonsinusoidal Voltage ◽  
Impatt Diodes

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

Energy balance in electric circuits with nonsinusoidal voltage and current

1997 ◽  
Vol 12 (4) ◽  
pp. 1507-1510 ◽  
Author(s):  
H.V. Agunov ◽  
A.V. Agunov ◽  
I.G. Globenco
Keyword(s):  
Energy Balance ◽  
Electric Circuits ◽  
Nonsinusoidal Voltage
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