When and why are streamers attracted to dielectric surfaces?

Author(s):  
Dirk Trienekens ◽  
Sander Nijdam ◽  
Gijs Akkermans ◽  
Ilian Plompen ◽  
Marc Merkx ◽  
...  
Keyword(s):  
2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.


2019 ◽  
Vol 95 (3) ◽  
pp. 45-51
Author(s):  
P.A. Abdurazova ◽  
◽  
Sh.T. Koshkarbayeva ◽  
M.S. Satayev ◽  
N.O. Dzhakipbekova ◽  
...  
Keyword(s):  

2008 ◽  
Vol 36 (4) ◽  
pp. 878-879
Author(s):  
J.A. Kenney ◽  
Eunsu Paek ◽  
G.S. Hwang
Keyword(s):  

2015 ◽  
Vol 15 (4) ◽  
pp. 2039-2045 ◽  
Author(s):  
Subham Dastidar ◽  
Abhishek Agarwal ◽  
Narendra Kumar ◽  
Vivekananda Bal ◽  
Siddhartha Panda

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