This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a
high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the
breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In
addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at
300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device
failure.