Author(s):  
E.E. Bowles ◽  
S. Chapelle ◽  
G.X. Ferguson ◽  
D.S. Furuno ◽  
M. Marietta

2017 ◽  
Vol 5 (29) ◽  
pp. 15144-15153 ◽  
Author(s):  
Si-Wen Zhang ◽  
Bo-Si Yin ◽  
Chang Liu ◽  
Zhen-Bo Wang ◽  
Da-Ming Gu

For the next-generation energy-storage devices, high power density supercapacitors can be used as complementary power supplies.


2008 ◽  
Vol 600-603 ◽  
pp. 1015-1018 ◽  
Author(s):  
Ryosuke Ishii ◽  
Koji Nakayama ◽  
Hidekazu Tsuchida ◽  
Yoshitaka Sugawara

This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device failure.


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